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Tracking of conduction phenomena and degradation in organic light emitting diodes by current noise measurements

Appl. Phys. Lett. 78, 3262 (2001); doi:10.1063/1.1374516

Issue Date: 21 May 2001

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M. Sampietro, G. Ferrari, and D. Natali
Politecnico di Milano, Dip. Elettronica e Informazione, P.za L. da Vinci 32, 20133 Milano, Italy

U. Scherf and K. O. Annan
Polymerchemie, Inst. für Physikalische und Theoretische Chemie, Universität Potsdam, Karl-Liebknecht-Str. 24-25, D-14476 Golm, Germany

F. P. Wenzl and G. Leising
Inst. für Festkörperphysik, Technische Universität Graz, Petersgasse 16, A-8010 Graz, Austria
Noise current analysis, both in time and frequency, is proposed as a means to sense variations of the microscopic conduction in organic light emitting diodes and to track their time evolution. The sensitivity of the technique would allow to correlate the carriers conduction properties with the corresponding changes in the microscopic morphology of the organic layers as obtained with structural or spectroscopic investigations. The method is shown to be very effective also in sensing the initial state and the growth of organic diodes catastrophic degradation in large advance to current monitoring or other techniques. ©2001 American Institute of Physics.
History: Received 22 January 2001; accepted 4 April 2001
Permalink: http://link.aip.org/link/?APPLAB/78/3262/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Jb
    Electronic and magnetic devices; microelectronics Optoelectronic devices Light-emitting devices
  • 85.60.Bt
    Electronic and magnetic devices; microelectronics Optoelectronic devices Optoelectronic device characterization, design, and modeling
  • 73.61.Ph
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electrical properties of specific thin films Polymers; organic compounds
  • 84.37.+q
    Electronics; radiowave and microwave technology; direct energy conversion and storage Electric variable measurements (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
  • 73.50.Td
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport phenomena in thin films Noise processes and phenomena
  • YEAR: 2001

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (17)

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  1. R. H. Friend, R. W. Gymer, A. B. Holmes, J. H. Burroughes, R. N. Marks, C. Taliani, D. D. C. Bradley, D. A. Dos Santos, J. L. Bredas, M. Lögdlund, and W. R. Salaneck, Nature (London) 397, 121 (1999).
  2. J. C. Scott, J. H. Kaufman, P. J. Brok, R. DiPietro, J. Salem, and J. A. Goitia, J. Appl. Phys. 79, 2745 (1996).
  3. L. S. Liao, J. He, X. Zhou, M. Lu, Z. H. Xiong, Z. B. Deng, X. Y. Hou, and S. T. Lee, J. Appl. Phys. 88, 2386 (2000).
  4. J. McElvain, H. Antoniadis, M. R. Hueschen, J. N. Miller, D. M. Roitman, J. R. Sheats, and R. L. Moon, J. Appl. Phys. 80, 6002 (1996).
  5. V. N. Savvateev, A. V. Yakimov, D. Davidov, R. Pogreb, M. R. Neuman, and Y. Avny, Appl. Phys. Lett. 71, 3344 (1997).
  6. S. T. Lee, Z. Q. Gao, and L. S. Hung, Appl. Phys. Lett. 75, 1404 (1999).
  7. E. Gautier, A. Lorin, J. M. Nunzi, A. Schalchli, J. J. Benattar, and D. Vital, Appl. Phys. Lett. 69, 1071 (1996).
  8. A. J. M. Berntsen, P. Weijer, Y. Croonen, C. Liedenbaum, and J. J. M. Vleggaar, Philips J. Res. 51, 511 (1998).
  9. P. Fenter, F. Schreiber, V. Bulovic, and S. R. Forrest, Chem. Phys. Lett. 277, 521 (1997).
  10. L. K. J. Vandamme, IEEE Trans. Electron Devices 41, 2176 (1994).
  11. P. Herve, Thesis, Eindhoven University of Technology, 1997.
  12. S. Martin,, A. Dodabalapur, Z. Bao, B. Crone, H. E. Katz, W. Li, A. Passner, and J. A. Rogers, J. Appl. Phys. 87, 3381 (2000).
  13. M. Sampietro, L. Fasoli, and G. Ferrari, Rev. Sci. Instrum. 70, 2520 (1999).
  14. J. S. Bendat, Principles and Applications of Random Noise Theory (Wiley, New York, 1958).
  15. S. Tasch, A. Niko, G. Leising, and U. Scherf, Appl. Phys. Lett. 68, 1090 (1996).
  16. S. Tasch, J. Gao, F. P. Wenzl, L. Holzer, U. Scherf, K. Müllen, A. J. Heeger, and G. Leising, Electrochem. Solid-State Lett. 2, 303 (1999).
  17. S. Tasch, E. J. W. List, O. Ekström, W. Graupner, G. Leising, P. Schlichting, U. Rohr, Y. Geerts, U. Scherf, and K. Müllen, Appl. Phys. Lett. 71, 2883 (1997).

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