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Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces

Appl. Phys. Lett. 78, 3630 (2001); doi:10.1063/1.1377858

Issue Date: 4 June 2001

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S. H. Goss, X. L. Sun, A. P. Young, and L. J. Brillson
Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210

D. C. Look
Semiconductor Research Center, Wright State University, Dayton, Ohio 45435

R. J. Molnar
Massachusetts Institute of Technology, Lincoln Labs, Lexington, Massachussetts 02420
We have used low-temperature cathodoluminescence spectroscopy (CLS) to probe the spatial distribution and energies of electronic defects near GaN/Al2O3 interfaces grown by hydride vapor phase epitaxy (HVPE). Cross sectional secondary electron microscopy CLS shows systematic variations in impurity/defect emissions over a wide range of HVPE GaN/Sapphire electronic properties. These data, along with electrochemical capacitance–voltage profiling and secondary ion mass spectrometry, provide a consistent picture of near-interface doping by O diffusion from Al2O3 into GaN, over a range 100–1000 nm. ©2001 American Institute of Physics.
History: Received 21 February 2001; accepted 17 April 2001
Permalink: http://link.aip.org/link/?APPLAB/78/3630/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.20.Hb
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electron states at surfaces and interfaces Impurity and defect levels; energy states of adsorbed species
  • 73.40.Qv
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport in interface structures Metal–insulator–semiconductor structures (including semiconductor-to-insulator)
  • 78.60.Hk
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Other luminescence and radiative recombination Cathodoluminescence, ionoluminescence
  • 68.35.Fx
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Solid surfaces and solid-solid interfaces: Structure and energetics Diffusion; interface formation
  • 71.35.Gg
    Electronic structure of bulk materials Excitons and related phenomena Exciton-mediated interactions
  • 71.55.Eq
    Electronic structure of bulk materials Impurity and defect levels III–V semiconductors
  • YEAR: 2001

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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