Integration of self-assembled diblock copolymers for semiconductor capacitor fabrication
Appl. Phys. Lett. 79, 409 (2001); doi:10.1063/1.1383805
Issue Date: 16 July 2001
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We combine a self-organizing diblock copolymer system with semiconductor processing to produce silicon capacitors with increased charge storage capacity over planar structures. Our process uses a diblock copolymer thin film as a mask for dry etching to roughen a silicon surface on a 30 nm length scale, which is well below photolithographic resolution limits. Electron microscopy correlates measured capacitance values with silicon etch depth, and the data agree well with a geometric estimate. This block copolymer nanotemplating process is compatible with standard semiconductor processing techniques and is scalable to large wafer dimensions. ©2001 American Institute of Physics.
| History: | Received 23 February 2001; accepted 11 May 2001 |
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KEYWORDS and PACS
- 81.05.Lg
Materials science Specific materials: fabrication, treatment, testing and analysis Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials - 81.16.Dn
Materials science Methods of nanofabrication and processing Self-assembly - 84.32.Tt
Electronics; radiowave and microwave technology; direct energy conversion and storage Passive circuit components Capacitors - 81.65.Cf
Materials science Surface treatments Surface cleaning, etching, patterning - YEAR: 2001
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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