Patterned growth of single-walled carbon nanotubes on full 4-inch wafers
Appl. Phys. Lett. 79, 4571 (2001); doi:10.1063/1.1429294
Issue Date: 31 December 2001
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Patterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO2/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be very sensitive to the amount of H2 co-flow. Understanding of the chemistry enables the growth of high quality SWNTs from massive arrays (107108) of well-defined surface sites. The scale up in patterned nanotube growth shall pave the way to large-scale molecular wire devices. ©2001 American Institute of Physics.
| History: | Received 20 September 2001; accepted 19 October 2001 |
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http://link.aip.org/link/?APPLAB/79/4571/1 |
KEYWORDS and PACS
- 81.07.De
Materials science Nanoscale materials and structures: fabrication and characterization Nanotubes - 81.15.Gh
Materials science Methods of deposition of films and coatings; film growth and epitaxy Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) - 81.16.Hc
Materials science Methods of nanofabrication and processing Catalytic methods - 81.16.Nd
Materials science Methods of nanofabrication and processing Nanolithography - YEAR: 2001
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
REFERENCES (22)
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- M. S. Dresselhaus, G. Dresselhaus, and P. C. Ekhlund, Science of Fullerenes and Carbon Nanotubes (Academic, San Diego, 1996).
- C. Dekker,
Phys. Today 52, 22 (1999) . - P. L. McEuen,
Phys. World 13, 31 (2000) . - W. Liang, M. Bockrath, D. Bozovic, J. Hafner, M. Tinkham, and H. Park,
Nature (London) 411, 665 (2001) . - J. Kong, E. Yenilmez, T. W. Tombler, W. Kim, L. Liu, C. S. Jayanthi, S. Y. Wu, R. B. Laughlin, and H. Dai, Phys. Rev. Lett. 87, 106801 (2001).
- J. Kong, N. Franklin, C. Zhou, M. Chapline, S. Peng, K. Cho, and H. Dai,
Science 287, 622 (2000) . - P. G. Collins, K. Bradley, M. Ishigami, and A. Zettl,
Science 287, 1801 (2000) . - T. Rueckes, K. Kim, E. Joselevich, G. Y. Tseng, C. L. Cheung, and C. M. Lieber,
Science 289, 94 (2000) . - H. Dai,
Phys. World 13, 43 (2000) . - H. Dai, in Carbon Nanotubes, edited by M. S. Dresselhaus, G. Dresselhaus, and P. Avouris (Springer, Berlin, 2001), Vol. 80, p. 29.
- J. Kong, H. Soh, A. Cassell, C. F. Quate, and H. Dai,
Nature (London) 395, 878 (1998) . - S. Fan, M. Chapline, N. Franklin, T. Tombler, A. Cassell, and H. Dai,
Science 283, 512 (1999) . - Y. Yang, S. Huang, H. He, A. Mau, and L. Dai,
J. Am. Chem. Soc. 121, 10832 (1999) . - G. Gu, G. Philipp, X. Wu, M. Burghard, A. Bittner, and S. Roth, Adv. Func. Mater.11, 295 (2001).
- A. Cassell, N. Franklin, T. Tombler, E. Chan, J. Han, and H. Dai,
J. Am. Chem. Soc. 121, 7975 (1999) . - N. Franklin and H. Dai,
Adv. Mater. 12, 890 (2000) . - Y. Zhang, A. Chan, J. Cao, Q. Wang, W. Kim, Y. Li, N. Morris, E. Yenilmez, J. Kong, and H. Dai (unpublished).
- M. Su, B. Zheng, and J. Liu,
Chem. Phys. Lett. 322, 321 (2000) . - A. Dean,
J. Phys. Chem. 94, 1432 (1990) . - D. Wang, P. Qi, and H. Dai (unpublished result).
- A. Jorio, R. Saito, J. H. Hafner, C. M. Lieber, M. Hunter, T. McClure, G. Dresselhaus, and M. S. Dresselhaus, Phys. Rev. Lett. 86, 1118 (2001).
- Y. Li, J. Liu, Y. Wang, and Z. L. Wang,
Chem. Mater. 13, 1008 (2001) .







