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Integrally gated carbon nanotube-on-post field emitter arrays

Appl. Phys. Lett. 80, 118 (2002); doi:10.1063/1.1428775

Issue Date: 7 January 2002

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David S. Y. Hsu
Chemistry Division, Naval Research Laboratory, Washington, DC 20375

Jonathan Shaw
Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375
Multiwalled carbon nanotubes were grown using chemical vapor deposition on the tops of blunt vertical silicon posts in cells having a horizontal gate aperture of conventional field emitter design. We obtained over 1 mA total emission current from a single array, or 0.3 µA per cell at 40 V. In addition to the low voltage operation, the most distinctive differences from conventional field emitter arrays include their stability and the lack of catastrophic arcing without any special sample preparation.
History: Received 24 September 2001; accepted 17 October 2001
Permalink: http://link.aip.org/link/?APPLAB/80/118/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.45.Db
    Electronic and magnetic devices; microelectronics Vacuum microelectronics Field emitter and arrays, cold electron emitters
  • 85.35.Kt
    Electronic and magnetic devices; microelectronics Nanoelectronic devices Nanotube devices
  • 81.07.De
    Materials science Nanoscale materials and structures: fabrication and characterization Nanotubes
  • 81.15.Gh
    Materials science Methods of deposition of films and coatings; film growth and epitaxy Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
  • YEAR: 2001

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (14)
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