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Electrical properties and devices of large-diameter single-walled carbon nanotubes

Appl. Phys. Lett. 80, 1064 (2002); doi:10.1063/1.1448850

Issue Date: 11 February 2002

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Ali Javey, Moonsub Shim, and Hongjie Dai
Department of Chemistry, Stanford University, Stanford, California 94305
Individual large-diameter (~3 to 5 nm) semiconducting single-walled carbon nanotubes (SWNTs) are found to exhibit ambipolar field-effect transistor (FET) behavior, with easily accessible n- and p-conduction channels by simple electrostatic gates. The effects of temperature and ultraviolet radiation on their electrical properties are elucidated, shedding light into the intrinsic behavior of SWNTs in this relatively large-diameter regime. The ambipolar SWNT-FETs can be readily used as building blocks for functional nanoelectronic devices such as voltage inverters that operate under ambient conditions. ©2002 American Institute of Physics.
History: Received 18 September 2001; accepted 5 December 2001
Permalink: http://link.aip.org/link/?APPLAB/80/1064/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.63.Fg
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport in mesoscopic or nanoscale materials and structures Nanotubes
  • 61.80.Ba
    Structure of solids and liquids; crystallography Physical radiation effects, radiation damage (for photochemical reactions, see 82.50.-m) Ultraviolet, visible, and infrared radiation effects (including laser radiation)
  • 61.82.Fk
    Structure of solids and liquids; crystallography Radiation effects on specific materials Semiconductors
  • 85.35.Kt
    Electronic and magnetic devices; microelectronics Nanoelectronic devices Nanotube devices
  • 85.30.Tv
    Electronic and magnetic devices; microelectronics Semiconductor devices Field effect devices
  • YEAR: 2002

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (14)
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