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Observation of the Mott–Gurney law in tris (8-hydroxyquinoline) aluminum films

Appl. Phys. Lett. 80, 1198 (2002); doi:10.1063/1.1449527

Issue Date: 18 February 2002

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M. Kiy, P. Losio, I. Biaggio, M. Koehler, A. Tapponnier, and P. Günter
Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
We show that tris (8-hydroxyquinoline) aluminum (Alq3) thin films produced and characterized under ultrahigh vacuum conditions present a well-defined squared-law dependence of the injected current on the applied voltage at applied electric fields of the order of 0.25–1 MV/cm. From this, one derives an electric-field-independent electron mobility of the order of 10–7 cm2/(V s), with a variation between different samples of about one order of magnitude. Observations of current–voltage characteristics with clear indications of trap-filling and space-charge-limited conduction at high fields in Alq3 excludes the existence of traps with an exponential distribution of trap energies, as is commonly assumed in amorphous materials. ©2002 American Institute of Physics.
History: Received 18 October 2001; accepted 10 December 2001
Permalink: http://link.aip.org/link/?APPLAB/80/1198/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.61.Ng
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electrical properties of specific thin films Insulators
  • 81.05.Lg
    Materials science Specific materials: fabrication, treatment, testing and analysis Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
  • 73.50.Fq
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport phenomena in thin films High-field and nonlinear effects
  • 73.50.Gr
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport phenomena in thin films Charge carriers: generation, recombination, lifetime, trapping, mean free paths
  • YEAR: 2002

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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