Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Magnetic CdSe-based quantum dots grown on Mn-passivated ZnSe
In this letter we describe the properties of self-assembled CdSe quantum dots (QDs) grown on Mn-passivated ZnSe buffers. We show that the Mn deposited on the ZnSe surface during the passivation proces...
Next Article
Fast development of high coercivity in melt-spun Sm(Co,Fe,Cu,Zr)z magnets
A simple method was developed for magnetic hardening melt-spun Sm(Co,Fe,Cu,Zr)z alloys. The as-spun ribbons reached a coercivity of 2.8 T only by slow cooling from 850 to 400 °C, without the stand...

Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

Appl. Phys. Lett. 80, 1240 (2002); doi:10.1063/1.1449530

Issue Date: 18 February 2002

You are not logged in to this journal. Log in

A. T. Hanbicki and B. T. Jonker
Materials Physics Branch, Naval Research Laboratory, Washington, DC 20375

G. Itskos, G. Kioseoglou, and A. Petrou
Department of Physics, State University of New York, Buffalo, New York 14260
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency. This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology. ©2002 American Institute of Physics.
History: Received 4 October 2001; accepted 18 December 2001
Permalink: http://link.aip.org/link/?APPLAB/80/1240/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (95 kB) View Cart

EDITORIALLY RELATED

  1. Comment on "Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor" [Appl. Phys. Lett. 80, 1240 (2002)]
    R. Jansen
    Appl. Phys. Lett. 81, 2130 (2002)
  2. Response to "Comment on `Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor' " [Appl. Phys. Lett. 81, 2130 (2002)]
    A. T. Hanbicki et al.
    Appl. Phys. Lett. 81, 2131 (2002)

KEYWORDS and PACS

Keywords
PACS
  • 72.25.Mk
    Electronic transport in condensed matter Spin polarized transport Spin transport through interfaces
  • 73.40.Ns
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport in interface structures Metal–nonmetal contacts
  • 85.60.Jb
    Electronic and magnetic devices; microelectronics Optoelectronic devices Light-emitting devices
  • 85.75.-d
    Electronic and magnetic devices; microelectronics Magnetoelectronics: devices exploiting spin polarized transport or integrated magnetic fields
  • 73.61.Ey
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electrical properties of specific thin films III–V semiconductors
  • 73.61.At
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electrical properties of specific thin films Metal and metallic alloys
  • 73.40.Gk
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport in interface structures Tunneling
  • 75.50.Bb
    Magnetic properties and materials Studies of specific magnetic materials Fe and its alloys
  • 75.70.Ak
    Magnetic properties and materials Magnetic properties of thin films, surfaces, and interfaces Magnetic properties of monolayers and thin films
  • YEAR: 2002

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (25)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. I. Zutic, J. Fabian, and S. Das Sarma, Phys. Rev. B 64, 121201 (2001).
  2. M. E. Flatté and G. Vignale, Appl. Phys. Lett. 78, 1273 (2001).
  3. M. Oestreich, Nature (London) 402, 735 (1999).
  4. R. Fiederling, M. Kelm, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, Nature (London) 402, 787 (1999).
  5. B. T. Jonker, Y. D. Park, B. R. Bennett, H. D. Cheong, G. Kioseoglou, and A. Petrou, Phys. Rev. B 62, 8180 (2000);
    6. Appl. Phys. Lett. 77, 3989 (2000).
  6. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, Nature (London) 402, 790 (1999).
  7. V. P. Labella, D. W. Bullock, Z. Ding, C. Every, A. Venkatesan, W. F. Oliver, G. J. Salamo, P. M. Thibado, and M. Mortazavi, Science 292, 1518 (2001).
  8. G. Schmidt, D. Ferrand, L. W. Molenkamp, A. T. Filip, and B. J. van Wees, Phys. Rev. B 62, R4790 (2000).
  9. Y. Q. Jia, R. C. Shi, and S. Y. Chou, IEEE Trans. Magn. 32, 4707 (1996).
  10. P. R. Hammar, B. R. Bennett, M. J. Yang, and M. Johnson, Phys. Rev. Lett. 83, 203 (1999).
  11. C.-M. Hu, J. Nitta, A. Jensen, J. B. Hansen, and H. Takayanagi, Phys. Rev. B 63, 125333 (2001).
  12. S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, Phys. Rev. B 60, 7764 (1999).
  13. F. G. Monzon, H. X. Tang, and M. L. Roukes, Phys. Rev. Lett. 84, 5022 (2000).
  14. B. J. van Wees, Phys. Rev. Lett. 84, 5023 (2000).
  15. A. T. Filip, B. H. Hoving, F. J. Jedema, B. J. van Wees, B. Dutta, and S. Borghs, Phys. Rev. B 62, 9996 (2000).
  16. F. Meier and B. P. Zachachrenya, Optical Orientation (North-Holland, Amsterdam, 1984).
  17. B. T. Jonker, M. Furis, G. Itskos, A. T. Hanbicki, Y. D. Park, G. Kioseoglou, X. Wei, and A. Petrou, Appl. Phys. Lett. 79, 3098 (2001).
  18. H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H.-P. Schonherr, and K. H. Ploog, Phys. Rev. Lett. 87, 016601 (2001).
  19. E. I. Rashba, Phys. Rev. B 62, R16267 (2000).
  20. The sign convention is based on the ZnMnSe/AlGaAs spin LED system described in Ref. 5, where spin-down carriers are injected when the magnetic field is applied along the surface normal.
  21. M. B. Stearns, J. Magn. Magn. Mater. 5, 167 (1977).
  22. J. M. De Teresa, A. Barthelemy, A. Fert, J. P. Contour, F. Montaigne, and P. Seneor, Science 286, 507 (1999).
  23. J. J. Krebs and G. A. Prinz, NRL Memo Rep. 3870, Naval Research Lab, Washington, 1978.
  24. R. J. Soulen, J. M. Byers, M. S. Osofsky, B. Nadgorny, T. Ambrose, S.-F. Cheng, P. R. Broussard, C. T. Tanaka, J. Nowak, J. S. Moodera, A. Barry, and J. M. D. Coey, Science 282, 85 (1998).
  25. S. Adachi, T. Miyashita, S. Takeyama, Y. Takagi, and A. Tackeuchi, J. Lumin. 72, 307 (1997).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics