Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Trap-limited migration of vacancy-type defects in 7.5 keV H–-implanted Si
We have investigated the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy hydrogen ions in a region confined to the near-surface reg...
Next Article
Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells
We report improvements in the quality of two-dimensional (2D) electrons in modulation-doped AlAs quantum wells, leading to electron mobilities as high as 31 m2/Vs, a ten-fold increase over the mobilit...

Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursors

Appl. Phys. Lett. 80, 1580 (2002); doi:10.1063/1.1456949

Issue Date: 4 March 2002 | See: Erratum

You are not logged in to this journal. Log in

T.-C. Shen and J.-Y. Ji
Department of Physics, Utah State University, Logan, Utah 84322

M. A. Zudov and R.-R. Du
Department of Physics, University of Utah, Salt Lake City, Utah 84112

J. S. Kline and J. R. Tucker
Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801
Phosphorous delta-doping layers were fabricated in silicon by PH3 deposition at room temperature, followed by low-temperature Si epitaxy. Scanning tunneling microscope images indicate large H coverage, and regions of c(2×2) structure. Hall data imply full carrier activation with mobility <40 cm2/V s when the surface coverage is <~0.2 ML. Conductivity measurements show a ln(T) behavior at low temperatures, characteristic of a high-density two-dimensional conductor. Possible future applications to atom-scale electronics and quantum computation are briefly discussed. ©2002 American Institute of Physics.
History: Received 28 November 2001; accepted 3 January 2002
Permalink: http://link.aip.org/link/?APPLAB/80/1580/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (357 kB) View Cart

ERRATUM

  1. Erratum: "Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursors" [Appl. Phys. Lett. 80, 1580 (2002)]
    T.-C. Shen et al.
    Appl. Phys. Lett. 80, 3231 (2002)

KEYWORDS and PACS

Keywords
PACS
  • 61.72.Tt
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Doping and impurity implantation in germanium and silicon
  • 85.40.Ry
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Impurity doping, diffusion and ion implantation technology
  • 81.05.Cy
    Materials science Specific materials: fabrication, treatment, testing and analysis Elemental semiconductors
  • 73.61.Cw
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electrical properties of specific thin films Elemental semiconductors
  • 71.55.Cn
    Electronic structure of bulk materials Impurity and defect levels Elemental semiconductors
  • 72.80.Cw
    Electronic transport in condensed matter Conductivity of specific materials Elemental semiconductors
  • 61.72.Ss
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Impurity concentration, distribution, and gradients
  • 73.50.Dn
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport phenomena in thin films Low-field transport and mobility; piezoresistance
  • 73.50.Jt
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport phenomena in thin films Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
  • YEAR: 2002

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (18)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
  2. See, e.g., Perspectives in Quantum Hall Effects: Novel Quantum Liquids in Low-Dimensional Semiconductor Structures, edited by S. Das Sarma and A. Pinczuk (Wiley, New York, 1997).
  3. L. D. Nguyen, L. E. Larson, and U. K. Mishra, Proc. IEEE 80, 494 (1992).
  4. See, for example, The Quantum Hall Effect, edited by R. E. Prange and S. M. Girvin (Springer, New York 1990);
    5. L. P. Kouwenhoven, T. H. Oosterkamp, M. W. S. Danoesastro, M. Eto, D. G. Austing, T. Honda, and S. Tarucha, Science 278, 1788 (1997).
  5. B. E. Weir, L. C. Feldman, D. Monroe, H.-J. Gossmann, R. L. Headrick, and T. R. Hart, Appl. Phys. Lett. 65, 737 (1994).
  6. A. V. Zotov, V. G. Lifshits, T. Rupp, and I. Eisele, J. Appl. Phys. 83, 5865 (1998).
  7. P. H. Citrin, D. A. Muller, H.-J. Gossmann, R. Vanfleet, and P. A. Northrup, Phys. Rev. Lett. 83, 3234 (1999).
  8. For a review, see P. A. Lee and T. V. Ramakrishnan, Rev. Mod. Phys. 57, 287 (1985).
  9. J. R. Tucker and T.-C. Shen, Solid-State Electron. 42, 1061 (1998);
    10. Int. J. Circ. Theor. Appl. 28, 553 (2000).
  10. Y. Wang, M. J. Bronikowski, and R. J. Hamers, J. Phys. Chem. 98, 5966 (1994).
  11. J. Shan, Y. Wang, and R. J. Hamers, J. Phys. Chem. 100, 4961 (1996).
  12. L. Kipp, R. D. Bringans, D. K. Biegelsen, J. E. Northrup, A. Garcia, and L.-E. Swartz, Phys. Rev. B 52, 5843 (1995).
  13. M. L. Colaianni, P. J. Chen, and J. T. Yates, Jr., J. Vac. Sci. Technol. A 12, 2995 (1994).
  14. D.-S. Lin, T.-S. Ku, and R.-P. Chen, Phys. Rev. B 61, 2799 (2000).
  15. T.-C. Shen, W. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding, Ph. Avouris, and R. E. Walkup, Science 268, 1590 (1995).
  16. R. S. Becker, G. S. Higashi, Y. J. Chabal, and A. J. Becker, Phys. Rev. Lett. 65, 1917 (1990);
    17. T.-C. Shen and P. Avouris, Surf. Sci. 390, 35 (1997).
  17. J. L. O'Brien, S. R. Schofield, M. Y. Simmons, R. G. Clark, A. S. Dzurak, N. J. Curson, B. E. Kane, N. S. McAlpine, M. E. Hawley, and G. W. Brown, Phys. Rev. B 64, 161401 (2001).
  18. B. E. Kane, Nature (London) 393, 133 (1998).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics