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Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells
Appl. Phys. Lett. 80, 1583 (2002); doi:10.1063/1.1456265
Issue Date: 4 March 2002
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We report improvements in the quality of two-dimensional (2D) electrons in modulation-doped AlAs quantum wells, leading to electron mobilities as high as 31 m2/Vs, a ten-fold increase over the mobility of previous AlAs samples. Confirming the quality of our quantum wells, developing fractional quantum Hall states are observed in the first Landau level at high order filling factors 
= 2/5, 3/5, 3/7, 4/7, and 4/9, and at larger fillings, at = 4/3, 5/3, 7/3, 8/3, 8/5, and 11/3. Thanks to the much larger effective mass and g factor of AlAs 2D electrons compared to GaAs, and to the possible multivalley occupancy of AlAs 2D electrons, our improved systems help bring a wider scope to the investigation of low-disorder, interacting 2D electrons. ©2002 American Institute of Physics.
= 2/5, 3/5, 3/7, 4/7, and 4/9, and at larger fillings, at = 4/3, 5/3, 7/3, 8/3, 8/5, and 11/3. Thanks to the much larger effective mass and g factor of AlAs 2D electrons compared to GaAs, and to the possible multivalley occupancy of AlAs 2D electrons, our improved systems help bring a wider scope to the investigation of low-disorder, interacting 2D electrons. ©2002 American Institute of Physics.
| History: | Received 3 October 2001; accepted 2 January 2002 |
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BibSonomy
KEYWORDS and PACS
semiconductor quantum wells,
two-dimensional electron gas,
electron mobility,
quantum Hall effect,
aluminium compounds,
III-V semiconductors,
Landau levels,
effective mass,
g-factor
- 73.63.Hs
Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport in mesoscopic or nanoscale materials and structures Quantum wells - 73.43.Lp
Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Quantum Hall effects Collective excitations - 73.21.Fg
Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems (for electron states in nanoscale materials, see 73.22.-f) Quantum wells - 71.70.Di
Electronic structure of bulk materials Level splitting and interactions Landau levels - YEAR: 2002
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (14)
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