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Microgating carbon nanotube field emitters by in situ growth inside open aperture arrays

Appl. Phys. Lett. 80, 2988 (2002); doi:10.1063/1.1472463

Issue Date: 22 April 2002

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David S. Y. Hsu
Surface Chemistry Branch, Chemistry Division, Naval Research Laboratory, Washington, DC 20375
Multiwalled carbon nanotubes were grown using chemical vapor deposition inside small apertures having a horizontal gate and a sidewall insulator spacer. Emission currents up to 140 nA per cell at 63 V have been obtained. These arrays have exhibited a gate current as low as 2.5% of the anode current throughout the entire gate voltage range, representing the lowest gate to anode current ratio of gated nanotube emitters reported to date. We attribute this feature to the emitter geometry and method of fabrication. The overall fabrication method required only a few and simple processing steps. ©2002 American Institute of Physics.
History: Received 4 October 2001; accepted 23 February 2002
Permalink: http://link.aip.org/link/?APPLAB/80/2988/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.07.De
    Materials science Nanoscale materials and structures: fabrication and characterization Nanotubes
  • 85.45.Db
    Electronic and magnetic devices; microelectronics Vacuum microelectronics Field emitter and arrays, cold electron emitters
  • 79.70.+q
    Electron and ion emission by liquids and solids; impact phenomena Field emission, ionization, evaporation, and desorption
  • YEAR: 2002

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (21)
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