Room-temperature homogeneous nucleation synthesis and thermal stability of nanometer single crystal CeO2
Nanometer (about 4~5 nm) CeO2 single crystals were first synthesized by room-temperature homogeneous nucleation; the size was determined by electron microscopy and specific surfaced area of the partic...
Nanometer (about 4~5 nm) CeO2 single crystals were first synthesized by room-temperature homogeneous nucleation; the size was determined by electron microscopy and specific surfaced area of the partic...
On-chip vacuum microtriode using carbon nanotube field emitters
We show a fully integrated, on-chip, vacuum microtriode fabricated via silicon micromachining processes using carbon nanotubes as field emitters. The triode is constructed laterally on a silicon surfa...
We show a fully integrated, on-chip, vacuum microtriode fabricated via silicon micromachining processes using carbon nanotubes as field emitters. The triode is constructed laterally on a silicon surfa...
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We have fabricated single-wall carbon nanotube field-effect transistors (CNFETs) in a conventional metal–oxide–semiconductor field-effect transistor (MOSFET) structure, with gate electrodes above the conduction channel separated from the channel by a thin dielectric. These top gate devices exhibit excellent electrical characteristics, including steep subthreshold slope and high transconductance, at gate voltages close to 1 V—a significant improvement relative to previously reported CNFETs which used the substrate as a gate and a thicker gate dielectric. Our measured device performance also compares very well to state-of-the-art silicon devices. These results are observed for both p- and n-type devices, and they suggest that CNFETs may be competitive with Si MOSFETs for future nanoelectronic applications. ©2002 American Institute of Physics.
| History: | Received 24 January 2002; accepted 3 April 2002 |
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http://link.aip.org/link/?APPLAB/80/3817/1 |
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Connotea
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BibSonomy
ERRATUM
- Erratum: "Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes" [Appl. Phys. Lett. 80, 3817 (2002)]
S. J. Wind et al.
Appl. Phys. Lett. 81, 1359 (2002)
KEYWORDS and PACS
- 85.35.Kt
Electronic and magnetic devices; microelectronics Nanoelectronic devices Nanotube devices - 85.30.Tv
Electronic and magnetic devices; microelectronics Semiconductor devices Field effect devices - 73.63.Fg
Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport in mesoscopic or nanoscale materials and structures Nanotubes - YEAR: 2002
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PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (16)
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- D. J. Frank,
Proc. IEEE 89, 259 (2001) . - S. Tans, A. Verschueren, and C. Dekker,
Nature (London) 393, 49 (1998) . - R. Martel, Appl. Phys. Lett. 73, 2447 (1998).
- A. Bachtold, P. Hadley, T. Nakashini, and C. Dekker,
Science 294, 1317 (2001) . - R. Martel, Proceedings IEDM 2001, p. 159.
- V. Derycke, R. Martel, J. Appenzeller, and P. Avouris,
Nano Lett. 1, 453 (2001) . - V. Derycke, R. Martel, J. Appenzeller, and P. Avouris, Appl. Phys. Lett. (unpublished).
- A. Thess,
Science 273, 483 (1996) . - R. Martel, Phys. Rev. Lett. 87, 256805 (2001).
- B. Yu, Proceedings IEDM 2001, p. 937.
- R. Chau, Proceedings IEDM 2001, p. 621.
- Due to the presence of the top gate, we were unable to obtain a direct measurement of the CNT diameter. However, the device characteristics—the steepness of the subthreshold slope in particular—are consistent with the behavior of a single SWNT device. (CNFETs with more than a very small number of nanotubes turn on gradually.) Thus, the normalized values given represent an upper bound.
- J. Guo, S. Goasguen, M. Lundstrom, and D. Datta (private communication).
- American Institute of Physics Handbook (McGraw–Hill, New York, 1972).
- H. Ago,
J. Phys. Chem. B 103, 8116 (1999) ;
S. Suzuki, C. Bower, and Y. Watanabe, Appl. Phys. Lett. 76, 4007 (2000). - J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris (unpublished).
