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On-chip vacuum microtriode using carbon nanotube field emitters

Appl. Phys. Lett. 80, 3820 (2002); doi:10.1063/1.1480884

Issue Date: 20 May 2002

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C. Bower, W. Zhu, D. Shalom, D. Lopez, L. H. Chen, P. L. Gammel, and S. Jin
Agere Systems Inc., 600 Mountain Avenue, Murray Hill, New Jersey 07974
We show a fully integrated, on-chip, vacuum microtriode fabricated via silicon micromachining processes using carbon nanotubes as field emitters. The triode is constructed laterally on a silicon surface using microelectromechanical systems (MEMS) design and fabrication principles. The technique incorporates high-performance nanomaterials in a MEMS design with mature solid-state fabrication technology to create miniaturized, on-chip power amplifying vacuum devices, which could have important and far-reaching scientific and technological implications. ©2002 American Institute of Physics.
History: Received 20 February 2002; accepted 4 April 2002
Permalink: http://link.aip.org/link/?APPLAB/80/3820/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.45.Db
    Electronic and magnetic devices; microelectronics Vacuum microelectronics Field emitter and arrays, cold electron emitters
  • 85.35.Kt
    Electronic and magnetic devices; microelectronics Nanoelectronic devices Nanotube devices
  • 81.07.De
    Materials science Nanoscale materials and structures: fabrication and characterization Nanotubes
  • 85.85.+j
    Electronic and magnetic devices; microelectronics Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
  • 85.45.Bz
    Electronic and magnetic devices; microelectronics Vacuum microelectronics Vacuum microelectronic device characterization, design, and modeling
  • 84.47.+w
    Electronics; radiowave and microwave technology; direct energy conversion and storage Vacuum tubes (see also 85.45 Vacuum microelectronics)
  • 81.16.-c
    Materials science Methods of nanofabrication and processing
  • YEAR: 2002

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (24)
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  1. F. M. Charbonnier, J. P. Barbour, L. F. Garrett, and W. P. Dyke, Proc. IEEE 991 (1963).
  2. I. Brodie and C. A. Spindt, Appl. Surf. Sci. 2, 149 (1979).
  3. P. M. Lally, Y. Goren, and E. A. Nettesheim, IEEE Trans. Electron Devices 36, 2738 (1989).
  4. H. G. Kosmahl, IEEE Trans. Electron Devices 36, 2728 (1989).
  5. W. Friz and M. Ettenberg, in Proceedings of the Third International Conference on Vacuum Microelectronics, Monterey, CA, 1990.
  6. R. E. Neidert, P. M. Phillips, S. T. Smith, and C. A. Spindt, IEEE Trans. Electron Devices 38, 661 (1991).
  7. C. E. Holland, A. Rosengreen, and C. A. Spindt, IEEE Trans. Electron Devices 38, 2368 (1991).
  8. J. P. Calame, H. F. Gray, and J. L. Shaw, J. Appl. Phys. 73, 1485 (1993).
  9. C. A. Spindt, C. E. Holland, A. Rosengreen, and I. Brodie, J. Vac. Sci. Technol. B 11, 468 (1993).
  10. P. M. Phillips, R. E. Neidert, L. Malsawma, and C. Hor, IEEE Trans. Electron Devices 42, 1674 (1995).
  11. H. Makishima, H. Imura, M. Takahashi, H. Fukui, and A. Okamoto, Proceedings of the Tenth International Conference on Vacuum Microelectronics, Kyongju, Korea (1997), p. 194.
  12. H. Takemura, Y. Yomihari, N. Furutake, F. Matsuno, M. Yoshiki, N. Takada, A. Okamoto, and S. Miyano, Tech. Dig. Int. Electron Devices Meet. 709 (1997).
  13. H. Imura, S. Tsuida, M. Takahasi, A. Okamoto, H. Makishima, and S. Miyano, Tech. Dig. Int. Electron Devices Meet. 721 (1997).
  14. W. Zhu, P. K. Baumann, and C. A. Bower, in Vacuum Microelectronics, edited by W. Zhu (Wiley, New York, 2001), Chap. 6, p. 247.
  15. S. Ijima, Nature (London) 354, 56 (1991).
  16. K. A. Dean and B. R. Chalamala, Appl. Phys. Lett. 76, 375 (2000).
  17. W. Zhu, C. Bower, O. Zhou, G. Kochanski, and S. Jin, Appl. Phys. Lett. 75, 873 (1999).
  18. A. A. G. Driskill-Smith, D. G. Hasko, and H. Ahmed, Appl. Phys. Lett. 75, 2845 (1999).
  19. http://www.memsrus.com: The Design Handbook of MUMPs (Multi-User MEMS Processes), Cronos Integrated Microsystems, a JDSU Company, Research Triangle Park, North Carolina, 2000.
  20. C. Bower, W. Zhu, S. Jin, and O. Zhou, Appl. Phys. Lett. 77, 830 (2000).
  21. C. Bower, W. Zhu, D. J. Werder, S. Jin, and O. Zhou, Appl. Phys. Lett. 77, 2767 (2000).
  22. G. T. A. Kovacs, Micromachined Transducers Sourcebook (McGraw–Hill, Boston, 1998).
  23. R. H. Fowler and L. Nordheim, Proc. R. Soc. London, Ser. A 119, 173 (1928).
  24. J. A. Morton and R. M. Ryder, Bell Syst. Tech. J. 29, 496 (1950).

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