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Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
The change of band banding with the crystal polarity of GaN films was investigated using high-resolution photoemission spectroscopy. Compared with a N-face sample, the Ga-face sample exhibited higher ...
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Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1–x formed by N ion implantation

Appl. Phys. Lett. 80, 3958 (2002); doi:10.1063/1.1481196

Issue Date: 27 May 2002

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K. M. Yu, W. Walukiewicz, and J. W. Beeman
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

M. A. Scarpulla and O. D. Dubon
Materials Sciences Division, Lawrence Berkeley National Laboratory
Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720

M. R. Pillai and M. J. Aziz
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
We demonstrate that pulsed laser annealing followed by rapid thermal annealing greatly enhances incorporation of substitutional N in N+-implanted GaAs. Films implanted to 1.8% N exhibit a fundamental band gap of 1.26 eV (a band gap reduction of 160 meV), corresponding to an N activation efficiency of 50%. The optical and crystalline quality of the synthesized film is comparable to GaNxAs1–x thin films of similar composition grown by epitaxial growth techniques. Compared to films produced by N+ implantation and rapid thermal annealing only, the introduction of pulsed laser annealing improves N incorporation by a factor of 5. Moreover, we find that the synthesized films are thermally stable up to an annealing temperature of 950 °C. ©2002 American Institute of Physics.
History: Received 17 January 2002; accepted 28 March 2002
Permalink: http://link.aip.org/link/?APPLAB/80/3958/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.72.Cc
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Kinetics of defect formation and annealing
  • 61.72.Vv
    Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Doping and impurity implantation in III–V and II–VI semiconductors
  • 81.05.Ea
    Materials science Specific materials: fabrication, treatment, testing and analysis III–V semiconductors
  • 68.55.Ln
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Thin film structure and morphology Defects and impurities: doping, implantation, distribution, concentration, etc.
  • 71.55.Eq
    Electronic structure of bulk materials Impurity and defect levels III–V semiconductors
  • 61.80.Jh
    Structure of solids and liquids; crystallography Physical radiation effects, radiation damage (for photochemical reactions, see 82.50.-m) Ion radiation effects
  • 61.82.Fk
    Structure of solids and liquids; crystallography Radiation effects on specific materials Semiconductors
  • 85.40.Ry
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Impurity doping, diffusion and ion implantation technology
  • 61.80.Ba
    Structure of solids and liquids; crystallography Physical radiation effects, radiation damage (for photochemical reactions, see 82.50.-m) Ultraviolet, visible, and infrared radiation effects (including laser radiation)
  • 68.60.Dv
    Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Physical properties of thin films, nonelectronic Thermal stability; thermal effects
  • 71.20.Nr
    Electronic structure of bulk materials Electron density of states and band structure of crystalline solids Semiconductor compounds
  • YEAR: 2002

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (25)
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