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Conditions for ohmic electron injection at the Mg/Alq3 interface

Appl. Phys. Lett. 80, 4366 (2002); doi:10.1063/1.1484558

Issue Date: 10 June 2002

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M. Kiy, I. Biaggio, M. Koehler, and P. Günter
Swiss Federal Institute of Technology Zürich, Nonlinear Optics Laboratory, Institute of Quantum Electronics, ETH Hönggerberg HPF E7, CH-8093 Zürich, Switzerland
We show that the contacts formed by magnesium on tris (8-hydroxyquinoline) aluminum (Alq3) are intrinsically ohmic when they are fabricated and operated in ultrahigh vacuum. Under the same conditions, the injected current shows a steep increase approximately proportional to the seventh power of the applied voltage that we assign to trap filling. Only a subsequent contact with oxygen leads to an injection-limited behavior, where the observed steep current increase is caused by potential barriers at the contacts. In addition, we observe that electron injection in oxidized structures can be very well described by Fowler–Nordheim tunneling in the case when electrons are injected from the magnesium (Mg) contact evaporated onto Alq3. ©2002 American Institute of Physics.
History: Received 11 March 2002; accepted 19 April 2002
Permalink: http://link.aip.org/link/?APPLAB/80/4366/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Ns
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport in interface structures Metal–nonmetal contacts
  • 73.40.Gk
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport in interface structures Tunneling
  • YEAR: 2002

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (17)
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  1. S. Barth, U. Wolf, H. Bässler, P. Müller, H. Riel, H. Vestweber, P. F. Seidler, and W. Riess, Phys. Rev. B 60, 8791 (1999).
  2. U. Wolf, S. Barth, and H. Bässler, Appl. Phys. Lett. 75, 2035 (1999).
  3. I. H. Campbell and D. L. Smith, Appl. Phys. Lett. 74, 561 (1999).
  4. S. Barth, P. Müller, H. Riel, P. F. Seidler, W. Riess, H. Vestweber, U. Wolf, and H. Bässler, Synth. Met. 111–112, 327 (2000).
  5. S. Berleb, A. G. Mückl, W. Brütting, and M. Schwoerer, Synth. Met. 111–112, 341 (2000).
  6. M. Stössel, J. Staudigel, F. Steuber, J. Blässing, J. Simmerer, and A. Winnacker, Appl. Phys. Lett. 76, 115 (2000).
  7. M. Stössel, J. Staudigel, F. Steuber, J. Blässing, J. Simmerer, A. Winnacker, H. Neuner, D. Metzdorf, H.-H. Johannes, and W. Kowalsky, Synth. Met. 111–112, 19 (2000).
  8. M. A. Baldo and S. R. Forrest, Phys. Rev. B 64, 085201/1 (2001).
  9. W. Brütting, S. Berleb, and A. G. Mückl, Synth. Met. 122, 99 (2001).
  10. W. Brütting, S. Berleb, and A. G. Mückl, Org. Electr. 2, 1 (2001).
  11. H. Heil, J. Steiger, S. Karg, M. Gastel, H. Ortner, H. von Seggern, and M. Stössel, J. Appl. Phys. 89, 420 (2001).
  12. M. Kiy, I. Gamboni, I. Biaggio, and P. Günter, Proc. SPIE 4105, 290 (2001).
  13. M. Kiy, P. Losio, I. Biaggio, M. Koehler, A. Tapponnier, and P. Günter, Appl. Phys. Lett. 80, 1198 (2002).
  14. C. Shen, A. Kahn, and J. Schwartz, J. Appl. Phys. 89, 449 (2001).
  15. G. Horowitz, D. Fichou, X. Peng, and P. Delannoy, J. Phys. (France) 51, 1489 (1990).
  16. P. Delannoy, Eur. J. Appl. Math. 7, 13 (1981).
  17. V. I. Arkhipov, E. V. Emelianova, Y. H. Tak, and H. Bässler, J. Appl. Phys. 84, 848 (1998).

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