Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates
Metal-oxide-semiconductor transistors of ultrathin hafnium silicate films (equivalent oxide thickness (EOT) of 12.5–14 Å) with polycrystalline silicon and metal (TaN) gates have been demons...
Metal-oxide-semiconductor transistors of ultrathin hafnium silicate films (equivalent oxide thickness (EOT) of 12.5–14 Å) with polycrystalline silicon and metal (TaN) gates have been demons...
Phase coexistence in Pb(Fe2/3W1/3)O3–PbTiO3 solid solutions
The crystalline symmetry of the solid solution formed by a relaxor and a ferroelectric material with formula: (1–x)Pb(Fe2/3W1/3)O3–xPbTiO3, with various x was investigated, at T = 300 K. A c...
The crystalline symmetry of the solid solution formed by a relaxor and a ferroelectric material with formula: (1–x)Pb(Fe2/3W1/3)O3–xPbTiO3, with various x was investigated, at T = 300 K. A c...
The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions
Appl. Phys. Lett. 80, 4419 (2002); doi:10.1063/1.1485122
Issue Date: 10 June 2002
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In this letter, reactions occurring at the interface between polycrystalline silicon (poly-Si) and LaSiOx high-dielectric-constant (high-k) insulating layers are characterized using x-ray photoelectron spectroscopy. Dielectrics were formed by sputter deposition of metal on silicon, followed by oxidation at 900 °C. Amorphous silicon was deposited on top by plasma-enhanced chemical vapor deposition from silane, followed by anneal at 650–1050 °C. We show that if the dielectric layer is exposed to sufficient water vapor before polysilicon deposition, annealing at 1050 °C for 10 s is sufficient to completely oxidize ~25 Å of deposited silicon. Minimal reaction is observed without deliberate water exposure. This demonstrates the importance of the dielectric surface condition in determining reactivity of high-k/polysilicon interfaces. ©2002 American Institute of Physics.
| History: | Received 20 February 2002; accepted 17 April 2002 |
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Connotea
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BibSonomy
KEYWORDS and PACS
silicon,
elemental semiconductors,
lanthanum compounds,
dielectric materials,
chemical interdiffusion,
X-ray photoelectron spectra,
sputtered coatings,
oxidation,
plasma CVD coatings,
annealing,
water
- 77.84.Bw
Dielectrics, piezoelectrics, and ferroelectrics and their properties Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials Elements, oxides, nitrides, borides, carbides, chalcogenides, etc. - 81.65.Mq
Materials science Surface treatments Oxidation - 68.35.Fx
Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Solid surfaces and solid-solid interfaces: Structure and energetics Diffusion; interface formation - 79.60.Jv
Electron and ion emission by liquids and solids; impact phenomena Photoemission and photoelectron spectra Interfaces; heterostructures; nanostructures - 61.72.Cc
Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Kinetics of defect formation and annealing - YEAR: 2002
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (11)
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