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Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

Appl. Phys. Lett. 81, 801 (2002); doi:10.1063/1.1497709

Issue Date: 29 July 2002

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A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, and M. Razeghi
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208
We demonstrate light emission at 280 nm from UV light-emitting diodes consisting of AlInGaN/AlInGaN multiple quantum wells. Turn-on voltage of the devices is ~5 V with a differential resistance of ~40 Omega. The peak emission wavelength redshifts ~1 nm at high injection currents. ©2002 American Institute of Physics.
History: Received 6 May 2002; accepted 5 June 2002
Permalink: http://link.aip.org/link/?APPLAB/81/801/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Jb
    Electronic and magnetic devices; microelectronics Optoelectronic devices Light-emitting devices
  • 85.35.Be
    Electronic and magnetic devices; microelectronics Nanoelectronic devices Quantum well devices (quantum dots, quantum wires, etc.)
  • YEAR: 2002

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (8)
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  6. A. Yasan, R. McClintock, S. R. Darvish, H. Zhang, K. Mayes, P. Kung, and M. Razeghi, 7th Wide Bandgap III-Nitride Workshop, 10–14 March 2002, Richmond, VA (2002).
  7. A. Yasan, R. McClintock, S. R. Darvish, Z. Lin, K. Mi, P. Kung, and M. Razeghi, Appl. Phys. Lett. 80, 2108 (2002).
  8. M. Razeghi, US Patent No. 5,831,277 (19 March 1997).

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