High-responsivity, normal-incidence long-wave infrared (
~7.2 µm) InAs/In0.15Ga0.85As dots-in-a-well detector
Normal incidence InAs/In0.15Ga0.85As dots-in-a-well detectors operating at T = 78 K with p~7.2 µm and a spectral width (/) of 35% are reported. The peak at 7.2 µm is attributed to the boun...
~7.2 µm) InAs/In0.15Ga0.85As dots-in-a-well detectorNormal incidence InAs/In0.15Ga0.85As dots-in-a-well detectors operating at T = 78 K with p~7.2 µm and a spectral width (/) of 35% are reported. The peak at 7.2 µm is attributed to the boun...
Ferroelectric BaTiO3 thin-film optical waveguide modulators
High-quality BaTiO3 epitaxial thin films on MgO substrates have been grown by pulsed-laser deposition. Both, c-axis and a-axis BaTiO3 orientations were studied. Mach–Zehnder optical waveguide mod...
High-quality BaTiO3 epitaxial thin films on MgO substrates have been grown by pulsed-laser deposition. Both, c-axis and a-axis BaTiO3 orientations were studied. Mach–Zehnder optical waveguide mod...
Thin-film lasers based on dye-deoxyribonucleic acid-lipid complexes
Appl. Phys. Lett. 81, 1372 (2002); doi:10.1063/1.1501164
Issue Date: 19 August 2002
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Amplified spontaneous emission (laser action without cavities) from deoxyribonucleic acid (DNA) derivative films was achieved by doping with a hemicyanine dye which is well known as a nonlinear optical molecule. The amplification confirmed by spectral narrowing and superlinear dependence of the emission intensity on the pumping was observed from the complex films when the film samples were irradiated with a nanosecond laser at the intensity above a threshold value (~20 µJ). The durability and low threshold values suggest the possibility of DNA complexes as a practical candidate for thin-film dye lasers. ©2002 American Institute of Physics.
| History: | Received 28 March 2002; accepted 24 June 2002 |
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