Time-varying response of molecular electron devices: A fundamental requirement for organic nanoelectronics
A simple formalism within the framework of the time-dependent Green's function theory is developed to calculate the time-varying response of molecular devices under small-signal conditions. Results ar...
A simple formalism within the framework of the time-dependent Green's function theory is developed to calculate the time-varying response of molecular devices under small-signal conditions. Results ar...
Orientation-sensitive magnetic force microscopy for future probe storage applications
A focused ion beam process was utilized to physically define a "point dipole" magnetic force microscopy (MFM) tip with cylindrical dimensions as small as 50 nm in diameter and 10 nm in heigh...
A focused ion beam process was utilized to physically define a "point dipole" magnetic force microscopy (MFM) tip with cylindrical dimensions as small as 50 nm in diameter and 10 nm in heigh...
Simulation of chemical mechanical planarization of copper with molecular dynamics
Appl. Phys. Lett. 81, 1875 (2002); doi:10.1063/1.1505113
Issue Date: 2 September 2002
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With an aim to understanding the fundamental mechanisms underlying chemical mechanical planarization (CMP) of copper, we simulate the nanoscale polishing of a copper surface with molecular dynamics utilizing the embedded atom method. Mechanical abrasion produces rough planarized surfaces with a large chip in front of the abrasive particle, and dislocations in the bulk of the crystal. The addition of chemical dissolution leads to very smooth planarized copper surfaces and considerably smaller frictional forces that prevent the formation of bulk dislocations. This is a first step towards understanding the interplay between mechanistic material abrasion and chemical dissolution in chemical mechanical planarization of copper interconnects. ©2002 American Institute of Physics.
| History: | Received 14 March 2002; accepted 11 July 2002 |
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http://link.aip.org/link/?APPLAB/81/1875/1 |
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BibSonomy
KEYWORDS and PACS
copper,
chemical mechanical polishing,
molecular dynamics method,
surface topography,
dislocations,
friction,
dissolving,
integrated circuit interconnections
- 81.65.Ps
Materials science Surface treatments Polishing, grinding, surface finishing - 68.35.Bs
Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Solid surfaces and solid-solid interfaces: Structure and energetics Structure of clean surfaces (reconstruction) - 64.75.+g
Equations of state, phase equilibria, and phase transitions Solubility, segregation, and mixing; phase separation - 85.40.Ls
Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Metallization, contacts, interconnects; device isolation - 61.72.Lk
Structure of solids and liquids; crystallography Defects and impurities in crystals; microstructure Linear defects: dislocations, disclinations - 62.20.Qp
Mechanical and acoustical properties of condensed matter Mechanical properties of solids Tribology and hardness - YEAR: 2002
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (10)
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