Wide-field, real-time depth-resolved imaging using structured illumination with photorefractive holography
We have demonstrated real-time, wide-field depth-resolved imaging by combining the techniques of structured illumination and photorefractive holography. These proof of principle experiments illustrate...
We have demonstrated real-time, wide-field depth-resolved imaging by combining the techniques of structured illumination and photorefractive holography. These proof of principle experiments illustrate...
Intrinsic nonlinearity of the light–current characteristic of semiconductor lasers with a quantum-confined active region
We describe a mechanism of nonlinearity of the light–current characteristic common to heterostructure lasers with a reduced-dimensionality active region. It arises from (i) noninstantaneous carri...
We describe a mechanism of nonlinearity of the light–current characteristic common to heterostructure lasers with a reduced-dimensionality active region. It arises from (i) noninstantaneous carri...
Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire
Appl. Phys. Lett. 81, 2151 (2002); doi:10.1063/1.1508414
Issue Date: 16 September 2002
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Based on AlInGaN/AlInGaN multiquantum wells, we compare properties of ultraviolet light-emitting diodes (LED) with peak emission at 340 nm grown on free-standing hydride vapor phase epitaxially grown GaN substrate and on sapphire. For the LED grown on GaN substrate, a differential resistance as low as 13 
and an output power of more than one order of magnitude higher than that of the same structure grown on sapphire are achieved. Due to higher thermal conductivity of GaN, output power of the LEDs saturates at higher injection currents compared to the devices grown on sapphire. ©2002 American Institute of Physics.
and an output power of more than one order of magnitude higher than that of the same structure grown on sapphire are achieved. Due to higher thermal conductivity of GaN, output power of the LEDs saturates at higher injection currents compared to the devices grown on sapphire. ©2002 American Institute of Physics.
| History: | Received 24 June 2002; accepted 29 July 2002 |
| Permalink: |
http://link.aip.org/link/?APPLAB/81/2151/1 |
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BibSonomy
KEYWORDS and PACS
aluminium compounds,
indium compounds,
gallium compounds,
light emitting diodes,
quantum well devices,
semiconductor quantum wells,
III-V semiconductors,
wide band gap semiconductors,
electroluminescence,
MOCVD
- 85.60.Jb
Electronic and magnetic devices; microelectronics Optoelectronic devices Light-emitting devices - 85.35.Be
Electronic and magnetic devices; microelectronics Nanoelectronic devices Quantum well devices (quantum dots, quantum wires, etc.) - 78.67.De
Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of nanoscale materials and structures Quantum wells - 81.07.St
Materials science Nanoscale materials and structures: fabrication and characterization Quantum wells - 81.15.Gh
Materials science Methods of deposition of films and coatings; film growth and epitaxy Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) - 78.60.Fi
Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Other luminescence and radiative recombination Electroluminescence - YEAR: 2002
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (9)
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Jpn. J. Appl. Phys., Part 2 41, L435 (2002) . - A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 81, 801 (2002).
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- M. Razeghi, US Patent No. 5,831,277 (19 March 1997).
- M. Razeghi, 7th Wide Bandgap III-Nitride Workshop, Richmond, VA, 10–12 March 2002.
- The substrate was provided by Samsung, Korea through Dr. Y. S. Park of ONR.
