Piezoelectric displacement sensing with a single-electron transistor
We propose a displacement sensing scheme for rf mechanical resonators made from GaAs, based on detecting the piezoelectrically induced charge. By using a single-electron transistor to detect the charg...
We propose a displacement sensing scheme for rf mechanical resonators made from GaAs, based on detecting the piezoelectrically induced charge. By using a single-electron transistor to detect the charg...
Electron transport through quantum-dot states of n-type carbon nanotubes
We calculate electron transmission in carbon nanotube field-effect-transistors, based on a tight-binding model. For positive gate voltages, a quantum dot is formed in the nanotube between two regions ...
We calculate electron transmission in carbon nanotube field-effect-transistors, based on a tight-binding model. For positive gate voltages, a quantum dot is formed in the nanotube between two regions ...
Growth of suspended carbon nanotube networks on 100-nm-scale silicon pillars
Appl. Phys. Lett. 81, 2261 (2002); doi:10.1063/1.1507840
Issue Date: 16 September 2002
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We investigated carbon nanotube growth by means of methane chemical vapor deposition on ultrafine silicon patterns prepared by synchrotron-radiation lithography. Grown nanotubes formed suspended bridges between pillars when pillar spacing was comparable to pillar height. Network-like interconnections were obtained on pillar arrays. Nearest-neighbor bridging accounted for more than 80% of all the bridging nanotubes. The self-directed growth between neighboring pillars may be explained by the swing of the nanotube cantilever which contacts a catalyst particle in liquid phase as the nanotube grows. These results confirm the possibility of self-assembled wiring of nanostructures. ©2002 American Institute of Physics.
| History: | Received 31 May 2002; accepted 29 July 2002 |
| Permalink: |
http://link.aip.org/link/?APPLAB/81/2261/1 |
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BibSonomy
KEYWORDS and PACS
carbon nanotubes,
silicon,
elemental semiconductors,
chemical vapour deposition,
X-ray lithography,
self-assembly
- 81.15.Gh
Materials science Methods of deposition of films and coatings; film growth and epitaxy Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) - 68.55.Ac
Surfaces and interfaces; thin films and low-dimensional systems (structure and nonelectronic properties) Thin film structure and morphology Nucleation and growth: microscopic aspects - 61.46.+w
Structure of solids and liquids; crystallography Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals - 85.40.Hp
Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Lithography, masks and pattern transfer - YEAR: 2002
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (10)
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