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Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device

Appl. Phys. Lett. 81, 2472 (2002); doi:10.1063/1.1508165

Issue Date: 23 September 2002

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Yoshiki Nakajima, Akira Kojima, and Nobuyoshi Koshida
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
A principle of planar-type visible light emission is presented using ballistic electrons as excitation source. The device is composed of a semitransparent top electrode, a thin film of fluorescent material, a nanocrystalline porous silicon (nc-PS) layer, an n-type silicon wafer, and an ohmic back contact. When a positive dc voltage is applied to the top electrode with respect to the substrate, electrons injected into the nc-PS layer are accelerated via multiple-tunneling through interconnected silicon nanocrystallites, and reach the outer surface as energetic hot or quasiballistic electrons. They directly excite the fluorescent film, and then induce uniform visible luminescence. This solid-state light-emitting device, regarded as a "vacuum-less cathode-ray tube," has many technological advantages over the conventional luminescent devices. It may lead to big innovations in the development of large-area thin flat-panel display and other electronic devices. ©2002 American Institute of Physics.
History: Received 12 June 2002; accepted 30 July 2002
Permalink: http://link.aip.org/link/?APPLAB/81/2472/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.60.Fi
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Other luminescence and radiative recombination Electroluminescence
  • 78.67.Bf
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of nanoscale materials and structures Nanocrystals and nanoparticles
  • 73.63.Bd
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport in mesoscopic or nanoscale materials and structures Nanocrystalline materials
  • 78.66.Db
    Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of specific thin films Elemental semiconductors and insulators
  • 73.61.Cw
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electrical properties of specific thin films Elemental semiconductors
  • 85.60.Jb
    Electronic and magnetic devices; microelectronics Optoelectronic devices Light-emitting devices
  • 73.50.Fq
    Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures Electronic transport phenomena in thin films High-field and nonlinear effects
  • YEAR: 2002

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (19)
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