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"Gentle lithography" with benzene on Si(100)

Appl. Phys. Lett. 81, 4422 (2002); doi:10.1063/1.1526459

Issue Date: 2 December 2002

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Peter Kruse and Robert A. Wolkow
Steacie Institute for Molecular Sciences, National Research Council of Canada, 100 Sussex Drive, Ottawa, Ontario K1A 0R6, Canada
A scanning tunneling microscopy (STM) based nanolithographic method has been demonstrated. The previously reported tip-induced desorption of benzene from Si(100) was utilized to pattern the surface with close to atomic precision. This kind of lithography can take place under very mild conditions. Writing occurs with a STM tip bias of 2.8 V. No heating, etching, or exposure to photons is required. The method is best suited for small to medium sized molecules and can be said to be reliable for resolutions of 2 nm and above. In this letter, we have demonstrated patterning areas of the surface with ethylene and vinyl ferrocene. ©2002 American Institute of Physics.
History: Received 8 July 2002; accepted 9 October 2002
Permalink: http://link.aip.org/link/?APPLAB/81/4422/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.16.Nd
    Materials science Methods of nanofabrication and processing Nanolithography
  • 85.40.Hp
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Lithography, masks and pattern transfer
  • 81.65.Cf
    Materials science Surface treatments Surface cleaning, etching, patterning
  • 81.05.Cy
    Materials science Specific materials: fabrication, treatment, testing and analysis Elemental semiconductors
  • 81.16.Ta
    Materials science Methods of nanofabrication and processing Atom manipulation
  • YEAR: 2002

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (22)
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  1. Y. N. Xia and G. M. Whitesides, Annu. Rev. Mater. Sci. 28, 153 (1998).
  2. S. Hong and C. A. Mirkin, Science 288, 1808 (2000).
  3. G. C. Abeln, S. Y. Lee, J. W. Lyding, D. S. Thompson, and J. S. Moore, Appl. Phys. Lett. 70, 2747 (1997).
  4. M. Bollani, R. Piagge, A. Charai, and D. Narducci, Appl. Surf. Sci. 175, 379 (2001).
  5. C. Thirstrup, M. Sakurai, K. Stokbro, and M. Aono, Phys. Rev. Lett. 82, 1241 (1999).
  6. E. T. Foley, A. F. Kam, J. W. Lyding, and Ph. Avouris, Phys. Rev. Lett. 80, 1336 (1998).
  7. M. McEllistrem, M. Allgeier, and J. J. Boland, Science 279, 545 (1998).
  8. C. C. Chen and J. T. Yates, Jr., Phys. Rev. B 43, 4041 (1991).
  9. Y. Taguchi, M. Fujisawa, T. Takaoka, T. Okada, and M. Nishijima, J. Chem. Phys. 95, 6870 (1991).
  10. G. P. Lopinski, D. J. Moffatt, and R. A. Wolkow, Chem. Phys. Lett. 282, 305 (1998).
  11. W. A. Hofer, A. J. Fisher, G. P. Lopinski, and R. A. Wolkow, Phys. Rev. B 63, 085314 (2001).
  12. S. N. Patitsas, G. P. Lopinski, O. Hul'ko, D. J. Moffa, and R. A. Wolkow, Surf. Sci. 457, L425 (2000).
  13. S. Alavi, R. Rousseau, S. N. Patitsas, G. P. Lopinski, R. A. Wolkow, and T. Seideman, Phys. Rev. Lett. 85, 5372 (2000).
  14. R. A. Wolkow, Annu. Rev. Phys. Chem. 50, 413 (1999).
  15. K. W. Self, R. I. Pelzel, J. H. G. Owen, C. Yan, W. Widdra, and W. H. Weinberg, J. Vac. Sci. Technol. A 16, 1031 (1998).
  16. S. Alavi, R. Rousseau, G. P. Lopinski, et al., Faraday Discuss. 117, 213 (2000).
  17. W. Widdra, C. Huang, G. A. D. Briggs, et al., J. Electron Spectrosc. Relat. Phenom. 64-65, 129 (1993).
  18. V. A. Ukraintsev and J. T. Yates, Jr., Surf. Sci. 346, 31 (1996).
  19. S. Fan, M. G. Chapline, N. R. Franklin, T. W. Tomblea, A. M. Cassell, and H. Dai, Science 283, 512 (1999).
  20. Z. J. Zhang, B. Q. Wei, G. Ramanath, and P. M. Ajayan, Appl. Phys. Lett. 77, 3764 (2000).
  21. S. K. Coulter, J. S. Hovis, M. D. Ellison, and R. J. Hamers, J. Vac. Sci. Technol. A 18, 1965 (2000).
  22. J. S. Hovis and R. J. Hamers, J. Phys. Chem. B 102, 687 (1998).

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