Bulk and surface contributions to resonant second-harmonic generation from Si(001) surfaces
Appl. Phys. Lett. 81, 5174 (2002); doi:10.1063/1.1533122
Issue Date: 30 December 2002
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The spectra of the isotropic and anisotropic contributions to second-harmonic generation from modified Si(001) surfaces are separated using polarization selection and rotational anisotropy. A bulk anisotropic resonance is observed at a two-photon energy of 3.42±0.01 eV. The isotropic surface contributions for native oxide Si and thermal oxide Si show peaks at 3.39±0.01 eV and 3.35±0.01 eV, respectively. Interference between these contributions and the bulk signal can shift the apparent resonance position if they are not separated. The surface produces a noninterfering contribution that is comparable to the interfering contribution for H-terminated Si but negligible for oxidized silicon. ©2002 American Institute of Physics.
| History: | Received 3 September 2002; accepted 2 November 2002 |
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http://link.aip.org/link/?APPLAB/81/5174/1 |
KEYWORDS and PACS
silicon,
elemental semiconductors,
optical harmonic generation,
light polarisation,
optical rotation,
two-photon processes,
semiconductor-insulator boundaries,
oxidation
- 42.65.Ky
Optics Nonlinear optics Harmonic generation, frequency conversion - 78.20.Ek
Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter Optical properties of bulk materials and thin films Optical activity - 81.65.Mq
Materials science Surface treatments Oxidation - YEAR: 2002
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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