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Ferromagnetic Ga1–xMnxAs produced by ion implantation and pulsed-laser melting

Appl. Phys. Lett. 82, 1251 (2003); doi:10.1063/1.1555260

Issue Date: 24 February 2003

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M. A. Scarpulla and O. D. Dubon
Department of Materials Science & Engineering, University of California at Berkeley, Berkeley, California 94720
Lawrence Berkeley National Laboratory, Berkeley, California 94720

K. M. Yu and O. Monteiro
Lawrence Berkeley National Laboratory, Berkeley, California 94720

M. R. Pillai and M. J. Aziz
Division of Engineering & Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

M. C. Ridgway
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
We demonstrate the formation of ferromagnetic Ga1–xMnxAs films by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie temperature up to 29 K for samples with a maximum Mn concentration of x[approximate]0.03. A remanent magnetization persisting above 85 K has been observed for samples with x[approximate]0.10, in which 40% of the Mn resides on substitutional lattice sites. We find that the ferromagnetism in Ga1–xMnxAs is rather robust to the presence of structural defects. ©2003 American Institute of Physics.
History: Received 26 September 2002; accepted 3 January 2003
Permalink: http://link.aip.org/link/?APPLAB/82/1251/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.50.Pp
    Magnetic semiconductors
  • 75.50.Dd
    Nonmetallic ferromagnetic materials
  • 75.70.Ak
    Magnetic properties of monolayers and thin films
  • 68.55.Ln
    Thin film defects and impurities including doping, implantation, distribution, concentration, etc
  • 61.72.Vv
    Doping and impurity implantation in III–V and II–VI semiconductors
  • 75.60.Ej
    Magnetization curves, hysteresis, Barkhausen and related effects
  • 61.80.Ba
    Ultraviolet, visible, and infrared radiation effects including laser radiation
  • 61.72.Cc
    Kinetics of defect formation and annealing
  • 75.30.Kz
    Magnetic phase boundaries including magnetic transitions, metamagnetism, etc
  • YEAR: 2003

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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