Electron spin relaxation under drift in GaAs
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function...
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function...
Nitride microlens arrays for blue and ultraviolet wavelength applications
Nitride microlens arrays with sizes as small as 10 µm in diameter have been fabricated on GaN and AlN epilayers using the method of photoresist reflow and inductively coupled plasma dry etching....
Nitride microlens arrays with sizes as small as 10 µm in diameter have been fabricated on GaN and AlN epilayers using the method of photoresist reflow and inductively coupled plasma dry etching....
Doping-induced strain in N-doped 4H–SiC crystals
Appl. Phys. Lett. 82, 3689 (2003); doi:10.1063/1.1579120
Issue Date: 26 May 2003
You are not logged in to this journal. Log in
Stress in epitaxial layers due to crystal lattice mismatch directly influences the growth, structure, and basic electrophysical parameters of epitaxial films and also to a large extent the degradation processes in semiconductor devices. In this letter, we present a theoretical model for calculating the induced lattice compression due to N doping and the critical thickness concerning formation of misfit dislocations in homoepitaxial 4H–SiC layers with different N-doping levels. For example: The model predicts that substrates with a N concentration of 3×1019 cm–3 induce misfit dislocations when the epilayer thickness reaches ~10 µm. Also, the N-doping concentration in the 1×1018–1×1019 cm–3 range yields a strain that not will cause misfit dislocactions at the substrate and epilayer interface until an epilayer thickness of 200–300 µm is reached. Supporting evidence of the induced lattice compression due to N doping have been done by synchrotron white-beam x-ray topography on samples with different N-doping levels and are compared with the predicted results from the model. ©2003 American Institute of Physics.
| History: | Received 17 October 2002; accepted 11 April 2003 |
| Permalink: |
http://link.aip.org/link/?APPLAB/82/3689/1 |
| BUY THIS ARTICLE | (US$24) |
|
|
|
|
Connotea
CiteULike
del.icio.us
BibSonomy
KEYWORDS and PACS
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (10)
For access to fully linked references, you need to log in.
For access to fully linked references, you need to Log in.
- R. N. Kyutt, E. N. Mokhov, and S. S. Tregubova,
Sov. Phys. Solid State 23, 2034 (1981) . - J. P. Hirth and J. Lothe, Theory of Dislocations, 2nd ed. (Wiley, New York, 1982, reprint ed., 1992), p.118.
- Silicon Carbide, Gmelin Handbook in Organic Chemistry supplement vol. B2, 8th ed. (1984) Part 1.
- R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).
- J. W. Matthews and A. E. Blakeslee,
J. Cryst. Growth 27, 118 (1974) . - J. H. Van der Merwe, J. Appl. Phys. 34, 123 (1962).
- C. A. Ball and J. H. Van der Merwe, Dislocations in Solids, edited by F. R. N. Nabarro (North–Holland, Amsterdam, 1983), p. 123.
- J. Q. Liu, H. J. Chung, T. Kuhr, Q. Li, and M. Skowronski, Appl. Phys. Lett. 80, 2111 (2002).
- P. Pirouz,
Solid State Phenom. 56, 107 (1997) . - H. Jacobson, J. Birch, R. Yakimova, M. Syväjärvi, J. P. Bergman, A. Ellison, T. Tuomi, and E. Janzén, J. Appl. Phys. 91, 6354 (2002).
