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Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

Appl. Phys. Lett. 82, 4092 (2003); doi:10.1063/1.1580631

Issue Date: 9 June 2003

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A. T. Hanbicki, O. M. J. van 't Erve, R. Magno, G. Kioseoglou, C. H. Li, and B. T. Jonker
Naval Research Laboratory, Washington, DC 20375

G. Itskos, R. Mallory, M. Yasar, and A. Petrou
State University of New York at Buffalo, Buffalo, New York 14260
Electron-spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single-step tunneling is the dominant transport mechanism. The current–voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses, indicating that tunneling enables significant spin injection from a metal into a semiconductor. ©2003 American Institute of Physics.
History: Received 4 February 2003; accepted 4 April 2003
Permalink: http://link.aip.org/link/?APPLAB/82/4092/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.25.Mk
    Spin transport through interfaces
  • 72.25.Hg
    Electrical injection of spin polarized carriers
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • 73.43.Jn
    Tunneling (quantum Hall effect)
  • 73.40.Ns
    Electrical properties of metal–nonmetal contacts
  • 68.35.Ja
    Solid surface and interface dynamics and vibrations
  • 78.60.Fi
    Electroluminescence (condensed matter)
  • 73.63.Hs
    Quantum wells (electronic transport)
  • 75.70.Cn
    Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
  • YEAR: 2003

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (23)
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