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Epitaxial growth and magnetic properties of EuO on (001) Si by molecular-beam epitaxy

Appl. Phys. Lett. 83, 975 (2003); doi:10.1063/1.1593832

Issue Date: 4 August 2003

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J. Lettieri, V. Vaithyanathan, S. K. Eah, J. Stephens, V. Sih, D. D. Awschalom, J. Levy, and D. G. Schlom
Center for Oxide-Semiconductor Materials for Quantum Computation (COSMQC), University of Pittsburgh, Pittsburgh, Pennsylvania 15260
Epitaxial (001) EuO thin films have been grown on (001) Si utilizing an intermediate, epitaxial SrO buffer layer by molecular-beam epitaxy. Four-circle x-ray diffraction reveals nearly phase-pure samples. Magnetic measurements indicate that the EuO layer is ferromagnetic, with a transition temperature (68 K) close to the bulk value and a saturation magnetic moment of 4.7 Bohr magnetons per Eu atom. The magneto-optic Kerr effect observed is also comparable to bulk EuO. Such heterostructures have potential as a means to inject spin-polarized electrons into silicon for use in spintronics applications. ©2003 American Institute of Physics.
History: Received 27 November 2002; accepted 21 May 2003
Permalink: http://link.aip.org/link/?APPLAB/83/975/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.50.Pp
    Magnetic semiconductors
  • 75.70.Ak
    Magnetic properties of monolayers and thin films
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 72.25.Dc
    Spin polarized transport in semiconductors
  • 72.25.Hg
    Electrical injection of spin polarized carriers
  • 68.55.Nq
    Thin film composition and phase identification
  • 75.50.Dd
    Nonmetallic ferromagnetic materials
  • 78.20.Ls
    Magnetooptical effects (bulk materials/thin films)
  • 81.05.Hd
    Other semiconductors: fabrication, treatment, testing and analysis excluding elemental, II–VI, III–V and amorphous semiconductors
  • YEAR: 2003

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (31)
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