Reflection of guided modes in a semiconductor nanowire laser
We analyze the waveguiding properties of semiconductor (GaN, ZnO, CdS) single nanowire lasers which were recently demonstrated experimentally. In particular, we compute the reflectivity for a few lowe...
We analyze the waveguiding properties of semiconductor (GaN, ZnO, CdS) single nanowire lasers which were recently demonstrated experimentally. In particular, we compute the reflectivity for a few lowe...
Organic field-effect transistors by a wet-transferring method
Organic field-effect transistors (OFETs) were prepared from an epitaxially grown film fabricated by a wet-transferring process. 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) was grown b...
Organic field-effect transistors (OFETs) were prepared from an epitaxially grown film fabricated by a wet-transferring process. 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) was grown b...
Nanowire-based very-high-frequency electromechanical resonator
Appl. Phys. Lett. 83, 1240 (2003); doi:10.1063/1.1601311
Issue Date: 11 August 2003
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Fabrication and readout of devices with progressively smaller size, ultimately down to the molecular scale, is critical for the development of very-high-frequency nanoelectromechanical systems (NEMS). Nanomaterials, such as carbon nanotubes or nanowires, offer immense prospects as active elements for these applications. We report the fabrication and measurement of a platinum nanowire resonator, 43 nm in diameter and 1.3 µm in length. This device, among the smallest NEMS reported, has a fundamental vibration frequency of 105.3 MHz, with a quality factor of 8500 at 4 K. Its resonant motion is transduced by a technique that is well suited to ultrasmall mechanical structures. ©2003 American Institute of Physics.
| History: | Received 8 November 2002; accepted 25 June 2003 |
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