Experimental demonstration of a high quality factor photonic crystal microcavity
Appl. Phys. Lett. 83, 1915 (2003); doi:10.1063/1.1606866
Issue Date: 8 September 2003
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Subthreshold measurements of a photonic crystal (PC) microcavity laser operating at 1.3 µm show a linewidth of 0.10 nm, corresponding to a quality factor (Q)~1.3×104. The PC microcavity mode is a donor-type mode in a graded square lattice of air holes, with a theoretical Q~105 and mode volume Veff~0.25 cubic half-wavelengths in air. Devices are fabricated in an InAsP/InGaAsP multi-quantum-well membrane and are optically pumped at 830 nm. External peak pump power laser thresholds as low as 100 µW are also observed. ©2003 American Institute of Physics.
| History: | Received 19 May 2003; accepted 7 July 2003 |
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http://link.aip.org/link/?APPLAB/83/1915/1 |
KEYWORDS and PACS
indium compounds,
gallium arsenide,
III-V semiconductors,
photonic crystals,
microcavity lasers,
Q-factor,
laser modes,
optical pumping,
semiconductor quantum wells,
semiconductor superlattices
- 42.55.Tv
Photonic crystal lasers and coherent effects - 42.55.Sa
Microcavity and microdisk lasers - 85.35.Be
Quantum well devices including quantum dots, quantum wires, etc - 78.67.De
Optical properties of quantum wells - 78.66.Fd
Optical properties of IIIV semiconductors (thin films) - 42.70.Qs
Photonic bandgap materials - 78.67.Pt
Optical properties of multilayers and superlattices - YEAR: 2003
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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