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Variations of long- and short-range-order structural and magnetic properties of thermally annealed Mn/GaAs digital alloys

Appl. Phys. Lett. 83, 2354 (2003); doi:10.1063/1.1605243

Issue Date: 22 September 2003

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Y. L. Soo, S. Wang, S. Kim, G. Kim, M. Cheon, X. Chen, H. Luo, and Y. H. Kao
Department of Physics, State University of New York at Buffalo, Amherst, New York 14260

Y. Sasaki, X. Liu, and J. K. Furdyna
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556
The crystal structure and local environment surrounding Mn atoms in Mn/GaAs digital layers thermally annealed at different temperatures have been investigated using x-ray diffraction and extended x-ray absorption fine structure methods. As the annealing temperature is increased, a satellite peak near the GaAs (004) diffraction line systematically shifts towards higher angles, indicating an apparent decrease of lattice parameters in the Mn/GaAs layers. When the annealing temperature is increased to 550 °C the satellite peak position moves dramatically from below to above the GaAs (004) peak, accompanied by a corresponding increase of Mn–As bond length from 2.48 to 2.56 Å, suggesting that the local structure around Mn changes from Ga substitution in GaAs to that of MnAs-like phase. Variations of the long- and short-range-order structures are believed to be related to the observed changes of magnetic properties including the disappearance of ferromagnetism in the sample annealed at 550 °C. ©2003 American Institute of Physics.
History: Received 14 April 2003; accepted 10 July 2003
Permalink: http://link.aip.org/link/?APPLAB/83/2354/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.66.Fn
    Crystal structure of specific inorganic compounds
  • 75.50.Dd
    Nonmetallic ferromagnetic materials
  • 75.50.Pp
    Magnetic semiconductors
  • 61.72.Cc
    Kinetics of defect formation and annealing
  • YEAR: 2003

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ISSN:
0003-6951 (print)   1077-3118 (online)
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