Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Schottky barriers at metal-finite semiconducting carbon nanotube interfaces
Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of...
Next Article
Drain voltage scaling in carbon nanotube transistors
Decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior. However, we demonstrate that this also requires scaling the range of the drain voltag...

Germanium nanowire field-effect transistors with SiO2 and high-kappa HfO2 gate dielectrics

Appl. Phys. Lett. 83, 2432 (2003); doi:10.1063/1.1611644

Issue Date: 22 September 2003

You are not logged in to this journal. Log in

Dunwei Wang, Qian Wang, Ali Javey, Ryan Tu, and Hongjie Dai
Department of Chemistry, Stanford University, California 94305

Hyoungsub Kim and Paul C. McIntyre
Department of Materials Science and Engineering, Stanford University, California 94305

Tejas Krishnamohan and Krishna C. Saraswat
Department of Electrical Engineering, Stanford University, California 94305
Single-crystal Ge nanowires are synthesized by a low-temperature (275 °C) chemical vapor deposition (CVD) method. Boron doped p-type GeNW field-effect transistors (FETs) with back-gates and thin SiO2 (10 nm) gate insulators are constructed. Hole mobility higher than 600 cm2/V s is observed in these devices, suggesting high quality and excellent electrical properties of as-grown Ge wires. In addition, integration of high-kappa HfO2 (12 nm) gate dielectric into nanowire FETs with top-gates is accomplished with promising device characteristics obtained. The nanowire synthesis and device fabrication steps are all performed below 400 °C, opening a possibility of building three-dimensional electronics with CVD-derived Ge nanowires. ©2003 American Institute of Physics.
History: Received 27 May 2003; accepted 23 July 2003
Permalink: http://link.aip.org/link/?APPLAB/83/2432/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (323 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 73.40.Qv
    Electrical properties of metal–insulator–semiconductor structures including semiconductor-to-insulator
  • 73.63.Nm
    Quantum wires (electronic transport)
  • 77.22.Ch
    Permittivity (dielectric function)
  • 61.46.+w
    Structure of nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
  • YEAR: 2003

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (20)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundsfrom, and H. Dai, Nature Materials 1, 241 (2002).
  2. L. J. Lauhon, M. S. Gudiksen, D. Wang, and C. M. Lieber, Nature (London) 420, 57 (2002).
  3. P. Yang, Y. Wu, and R. Fan, Int. J. Nanosci. 1, 1 (2002).
  4. Yi Cui, Deli Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 149 (2003).
  5. J.-Y. Yu, S.-W. Chung, and J. R. Heath, J. Phys. Chem. 104, 11864 (2000).
  6. D. Zhang, C. Li, S. Han, X. Liu, T. Tang, W. Jin, and C. Zhou, Appl. Phys. Lett. 82, 112 (2003).
  7. D. Wang and H. Dai, Angew. Chem., Int. Ed. Engl. 41, 4783 (2002).
  8. Y. Wu and P. Yang, J. Am. Chem. Soc. 123, 3165 (2001).
  9. J. Kong, H. Soh, A. Cassell, C. F. Quate, and H. Dai, Nature (London) 395, 878 (1998).
  10. H. Soh, C. Quate, A. Morpurgo, C. M. Marcus, J. Kong, and H. Dai, Appl. Phys. Lett. 75, 627 (1999).
  11. L. M. H. a. J. J. R. S. C. Martin, IEEE Electron Device Lett. 10, 325 (1989).
  12. S. Ramo, J. R. Whinnery, and T. V. Duzer, Fields and Waves in Communication Electronics (Wiley, New York, 1994).
  13. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
  14. K. Chen, H. Wann, P. Ko, and C. Hu, IEEE Electron Device Lett. 17, 202 (1996).
  15. M. Leskela and M. Ritala, Thin Solid Films 409, 138 (2002).
  16. H. Kim, P. C. McIntyre, and K. C. Saraswat, Appl. Phys. Lett. 82, 106 (2003).
  17. S.-Y. Lee, H. Kim, P. C. McIntyre, K. C. Saraswat, and J. S. Byun, Appl. Phys. Lett. 82, 2874 (2003).
  18. T. Krishnamohan, Z. Krivokapic, and K. Saraswat, in IEEE Int. Conf. Simul. Semi. Proc. and Dev., 2003.
  19. S. B. Samavedam, H. H. Tseng, P. J. Tobin, J. Mogab, S. Dakshina-Murthy, L. B. La, J. Smith, J. Schaeffer, M. Zavala, R. Martin, B. Y. Nguyen, L. Hebert, O. Adetutu, V. Dhandapani, T. Y. Luo, R. Garcia, P. Abramowitz, M. Moosa, D. C. Gilmer, C. Hobbs, W. J. Taylor, J. M. Grant, R. Hegde, S. Bagchi, E. Luckowski, V. Arunachalam, M. Azrak, VLSI Tecc. Dig. Tech. Papers 2002 Symp., p. 24.
  20. C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, Tech. Dig. - Int. Electron Devices Meet. (in press).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics