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Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1–x alloys

Appl. Phys. Lett. 83, 2844 (2003); doi:10.1063/1.1616980

Issue Date: 6 October 2003

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K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, and J. W. Beeman
Lawrence Berkeley National Laboratory, Berkeley, California 94720

M. A. Scarpulla and O. D. Dubon
Department of Materials Science and Engineering, University of California, Berkeley, California
and Lawrence Berkeley National Laboratory, Berkeley, California 94720

M. C. Ridgway
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia

D. E. Mars and D. R. Chamberlin
Agilent Laboratories, 3500 Deer Creek Road, Palo Alto, California 94304
We demonstrate the mutual passivation phenomenon of Ge donors and isovalent N in highly mismatched alloy GaNxAs1–x doped with Ge. Layers of this alloy were formed by the sequential implantation of Ge and N ions followed by pulsed laser melting and rapid thermal annealing. The mutual passivation effect results in the electrical deactivation of GeGa donors (Ge on Ga sites) and suppression of the NAs (N on As sites) induced band gap narrowing through the formation of GeGa–NAs nearest neighbor pairs. These results in combination with the analogous effect observed in Si-doped GaNxAs1–x provide clear evidence of the general nature of the mutual passivation phenomenon in highly mismatched semiconductor alloys. ©2003 American Institute of Physics.
History: Received 11 June 2003; accepted 14 August 2003
Permalink: http://link.aip.org/link/?APPLAB/83/2844/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.61.Ey
    Electrical properties of III–V semiconductors (thin films)
  • 61.72.Vv
    Doping and impurity implantation in III–V and II–VI semiconductors
  • 61.80.Jh
    Ion radiation effects
  • 61.82.Fk
    Radiation effects on semiconductors
  • YEAR: 2003

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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