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Thermal conductivity of individual silicon nanowires

Appl. Phys. Lett. 83, 2934 (2003); doi:10.1063/1.1616981

Issue Date: 6 October 2003

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Deyu Li
Department of Mechanical Engineering, University of California, Berkeley, California 94720

Yiying Wu
Department of Chemistry, University of California, Berkeley, California 94720

Philip Kim
Department of Physics, Columbia University, New York, New York 10027

Li Shi
Department of Mechanical Engineering, University of Texas, Austin, Texas 78712

Peidong Yang
Department of Chemistry, University of California, Berkeley, California 94720
and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

Arun Majumdar
Department of Mechanical Engineering, University of California, Berkeley, California 94720
and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
The thermal conductivities of individual single crystalline intrinsic Si nanowires with diameters of 22, 37, 56, and 115 nm were measured using a microfabricated suspended device over a temperature range of 20–320 K. Although the nanowires had well-defined crystalline order, the thermal conductivity observed was more than two orders of magnitude lower than the bulk value. The strong diameter dependence of thermal conductivity in nanowires was ascribed to the increased phonon-boundary scattering and possible phonon spectrum modification. ©2003 American Institute of Physics.
History: Received 27 May 2003; accepted 13 August 2003
Permalink: http://link.aip.org/link/?APPLAB/83/2934/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.65.La
    Quantum wires (structure and nonelectronic properties)
  • 66.70.+f
    Nonelectronic thermal conduction and heat-pulse propagation in solids including thermal waves
  • 63.22.+m
    Phonons or vibrational states in low-dimensional structures and nanoscale materials
  • YEAR: 2003

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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