Applied Physics Letters
Search:
   
 
 
 
Previous Article
Switching dynamics in poly(vinylidene fluoride) and copolymers
Theoretical aspects of the field dependent switching dynamics of poly(vinylidene fluoride) and its copolymers have been investigated based on the experimental data of Furukawa [T. Furukawa, Phase Tran...
Next Article
Evidence for two-phase regions in Ba0.5Sr0.5TiO3 thin films from capacitance–voltage data
The Curie–Weiss plots of reciprocal dielectric constant versus temperature, in Ba0.5Sr0.5TiO3 films grown onto SrRuO3 lower electrodes by pulsed-laser deposition, show two minima below film thick...

Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films

Appl. Phys. Lett. 83, 3356 (2003); doi:10.1063/1.1621731

Issue Date: 20 October 2003

You are not logged in to this journal. Log in

N. A. Pertsev, J. Rodríguez Contreras, V. G. Kukhar, B. Hermanns, H. Kohlstedt, and R. Waser
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
The polarization reversal in single-crystalline ferroelectric films has been investigated experimentally and theoretically. The hysteresis loops were measured for Pb(Zr0.52Ti0.48)O3 films with thicknesses ranging from 8 to 250 nm. These films were grown epitaxially on SrRuO3 bottom electrodes deposited on SrTiO3 substrates. The measurements using Pt top electrodes showed that the coercive field Ec increases drastically as the film becomes thinner, reaching values as high as Ec[approximate]1200  kV/cm. To understand this observation, we calculated the thermodynamic coercive field Eth of a ferroelectric film as a function of the misfit strain Sm in an epitaxial system and showed that Eth strongly depends on Sm. However, the coercive field of ultrathin films, when measured at high frequencies, exceeds the calculated thermodynamic limit. Since this is impossible for an intrinsic coercive field Ec, we conclude that measurements give an apparent Ec rather than the intrinsic one. An enormous increase of apparent coercive field in ultrathin films may be explained by the presence of a conductive nonferroelectric interface layer. ©2003 American Institute of Physics.
History: Received 10 July 2003; accepted 27 August 2003
Permalink: http://link.aip.org/link/?APPLAB/83/3356/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (50 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 77.80.Dj
    Ferroelectric domain structure; hysteresis
  • 77.55.+f
    Dielectric thin films
  • 77.84.Dy
    Dielectric, piezoelectric, and ferroelectric niobates, titanates, tantalates, PZT ceramics, etc
  • 77.22.Ej
    Dielectric polarization and depolarization
  • YEAR: 2003

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (20)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. O. Auciello, J. F. Scott, and R. Ramesh, Phys. Today 51, 22 (1998).
  2. P. K. Larsen, G. J. M. Dormans, D. J. Taylor, and P. J. van Veldhoven, J. Appl. Phys. 76, 2405 (1994).
  3. A. K. Tagantsev, Cz. Pawlaczyk, K. Brooks, and N. Setter, Integr. Ferroelectr. 4, 1 (1994).
  4. J. F. M. Cillessen, M. W. J. Prins, and R. W. Wolf, J. Appl. Phys. 81, 2777 (1997).
  5. S. Ducharme, V. M. Fridkin, A. V. Bune, S. P. Palto, L. M. Blinov, N. N. Petukhova, and S. G. Yudin, Phys. Rev. Lett. 84, 175 (2000).
  6. A. K. Tagantsev, Ferroelectrics 184, 79 (1996).
  7. N. I. Lebedev and A. S. Sigov, Integr. Ferroelectr. 4, 21 (1994).
  8. A. K. Tagantsev and I. A. Stolichnov, Appl. Phys. Lett. 74, 1326 (1999).
  9. A. K. Tagantsev, M. Landivar, E. Colla, and N. Setter, J. Appl. Phys. 78, 2623 (1995).
  10. A. G. Zembilgotov, N. A. Pertsev, H. Kohlstedt, and R. Waser, J. Appl. Phys. 91, 2247 (2002).
  11. J. Rodríguez Contreras, J. Schubert, U. Poppe, O. Trithaveesak, K. Szot, Ch. Buchal, H. Kohlstedt, and R. Waser, Mater. Res. Soc. Symp. Proc. 688, C8.10 (2002).
  12. C. L. Jia, J. Rodríguez Contreras, U. Poppe, H. Kohlstedt, R. Waser, and K. Urban, J. Appl. Phys. 92, 101 (2002).
  13. J. Rodríguez Contreras, H. Kohlstedt, U. Poppe, R. Waser, and Ch. Buchal, Appl. Phys. Lett. 83, 126 (2003).
  14. M. E. Lines and A. M. Glass, Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford, 1977).
  15. N. A. Pertsev, V. G. Kukhar, H. Kohlstedt, and R. Waser, Phys. Rev. B 67, 054107 (2003).
  16. M. J. Haun, E. Furman, S. J. Jang, and L. E. Cross, Ferroelectrics 99, 13 (1989).
  17. L. N. Bulaevskii, Sov. Phys. Solid State 5, 2329 (1964).
  18. Y. Ishibashi, Ferroelectrics 98, 193 (1989).
  19. The misfit strain depends on the film thickness due to the strain relaxation caused by generation of misfit dislocations at the film/substrate interface.
  20. This value of a0 was chosen based on the measured lattice constants cb and ab of bulk PZT 50/50 ceramics and their electrostrictive constants Qln and polarization Ps = 0.5  C/m2 given in Ref. 16, using the theoretical relations (cba0)/a0 = Q11P<sub>s</sub><sup>2</sup> and (aba0)/a0 = Q12P<sub>s</sub><sup>2</sup>.

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.