Carbonate formation during post-deposition ambient exposure of high-k dielectrics
Appl. Phys. Lett. 83, 3543 (2003); doi:10.1063/1.1623316
Issue Date: 27 October 2003
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When thick films of group-III (La, Y)- and group-IV (Hf, Zr)-based high-k dielectrics are exposed to ambient for several months, Fourier transform infrared spectroscopy shows formation of carbonate species in the film bulk, likely due to reaction with atmospheric CO2. Group-III-based films show signs of carbonate feature growth within 10 min of air exposure, especially in films processed at relatively low temperatures (<600 °C). Carbonate formation is verified also for group-IV-based films, but at a significantly reduced concentration. Post-exposure annealing can reduce the carbonate observed in the IR spectra. However, post-exposure annealing likely does not remove carbon contamination, and it results in interface silicon oxide growth. The observed reactions of high-k films with the ambient may impose significant constraints on the post-deposition handling of high-k films. ©2003 American Institute of Physics.
| History: | Received 1 July 2003; accepted 9 September 2003 |
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http://link.aip.org/link/?APPLAB/83/3543/1 |
KEYWORDS and PACS
permittivity,
dielectric thin films,
Fourier transform spectra,
infrared spectra,
surface contamination,
annealing,
hafnium compounds,
zirconium compounds,
lanthanum compounds,
yttrium compounds
- 77.55.+f
Dielectric thin films - 77.22.Ch
Permittivity (dielectric function) - 77.84.Bw
Dielectric, piezoelectric, and ferroelectric elements, oxides, nitrides, borides, carbides, chalcogenides, etc. - 78.66.Nk
Optical properties of insulators (thin films) - 78.30.Hv
Infrared and Raman spectra in nonmetallic inorganics excluding elemental, II-VI and III-V semiconductors and fullerenes - 68.35.Dv
Composition, segregation; defects and impurities (solid surfaces/interfaces) - 61.72.Cc
Kinetics of defect formation and annealing - YEAR: 2003
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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