Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Next Article
90 W continuous-wave diode edge-pumped microchip composite Yb:Y3Al5O12 laser
High-power continuous-wave (cw) operation of a diode edge-pumped microchip composite Yb:Y3Al5O12 (YAG) laser is reported. Up to 90 W were obtained from a 400-µm-thick Yb:YAG/YAG structure with a...

Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes

Appl. Phys. Lett. 83, 4083 (2003); doi:10.1063/1.1626808

Issue Date: 17 November 2003

You are not logged in to this journal. Log in

A. Yasan, R. McClintock, K. Mayes, D. H. Kim, P. Kung, and M. Razeghi
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208
We investigated optical properties of single quantum well AlGaN-based UV 280 nm light-emitting diodes using temperature-dependent photoluminescence (PL) measurement. We found an "S-shaped" temperature dependence of the peak energy. From the Arrhenius plot of integrated PL intensity, we speculate that dislocations as well as thermal emission of carriers out of the quantum well are responsible for the PL quenching behavior. Also a second nonradiative channel with much lower activation energy was found, the origin of which we believe to be quenching of the bound excitons. ©2003 American Institute of Physics.
History: Received 22 May 2003; accepted 29 September 2003
Permalink: http://link.aip.org/link/?APPLAB/83/4083/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (48 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.35.Be
    Quantum well devices including quantum dots, quantum wires, etc
  • 85.60.Jb
    Light-emitting devices
  • 78.67.De
    Optical properties of quantum wells
  • 73.21.Fg
    Quantum wells (electron states/collective excitations)
  • 78.55.Cr
    Photoluminescence in III–V semiconductors
  • 61.72.Hh
    Indirect evidence of dislocations and other defects including resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.
  • 61.72.Lk
    Linear defects: dislocations, disclinations
  • 73.20.Mf
    Collective excitations (surface/interface states) including excitons, polarons, plasmons and other charge-density excitations
  • 71.35.Cc
    Intrinsic properties of excitons; optical absorption spectra
  • YEAR: 2003

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (16)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).
  2. K. G. Zolina, V. E. Kudryashov, A. N. Turkin, and A. E. Yunovich, MRS Internet J. Nitride Semicond. Res. 1, 11 (1996).
  3. P. G. Eliseev, P. Perlin, J. Lee, and M. Osinski, Appl. Phys. Lett. 71, 569 (1997).
  4. A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, H. Zhang, P. Kung, M. Razeghi, S. K. Lee, and J. Y. Han, Appl. Phys. Lett. 81, 2151 (2002).
  5. A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 81, 801 (2002).
  6. J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang, and M. Asif Khan, Appl. Phys. Lett. 81, 4910 (2002).
  7. Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 73, 1370 (1998).
  8. H. P. D. Schenk, P. De Mierry, F. Omnes, and P. Gibart, Phys. Status Solidi A 176, 307 (1999).
  9. J. Li, K. B. Nam, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 79, 3245 (2001).
  10. Y. H. Cho, G. H. Gainer, J. B. Lam, J. J. Song, W. Yang, and W. Jhe, Phys. Rev. B 61, 7203 (2000).
  11. A. Kaschner, T. Lüttgert, H. Born, A. Hoffmann, A. Yu. Egorov, and H. Riechert, Appl. Phys. Lett. 78, 1391 (2001).
  12. K. Yamashita, T. Kita, H. Nakayama, and T. Nishino, Phys. Rev. B 55, 4411 (1997).
  13. H. Haratizadeh, P. P. Paskov, G. Pozina, P. O. Holtz, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, Appl. Phys. Lett. 80, 1373 (2002).
  14. G. Steude, B. K. Meyer, A. Göldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, and I. Akasaki, Appl. Phys. Lett. 74, 2456 (1999).
  15. M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, J. Appl. Phys. 86, 3721 (1999).
  16. For the calculation of band offsets, we assumed a bowing parameter of 1 and a conduction band offset equal to 75% of the band gap difference.

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics