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The electrical turn-on characteristics of vertical-cavity surface-emitting lasers

Appl. Phys. Lett. 83, 4104 (2003); doi:10.1063/1.1628816

Issue Date: 17 November 2003

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Yang Liu, Kent D. Choquette, and Karl Hess
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
We present a detailed comparison of the electrical turn-on characteristics of 980 nm vertical-cavity surface-emitting lasers (VCSELs) with simulations using a recently extended laser simulator. It is shown that the three recombination mechanisms, spontaneous emission, Shockley–Read–Hall recombination, and Auger recombination, result in distinctly different exponential current–voltage dependencies below threshold. Therefore, information can be extracted about the relative strength of the recombination rates due to those processes, and their relative contributions to the threshold current can be assessed. We show that for the VCSELs studied in this work, spontaneous emission is the dominant contribution to the threshold current. ©2003 American Institute of Physics.
History: Received 19 May 2003; accepted 3 October 2003
Permalink: http://link.aip.org/link/?APPLAB/83/4104/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Semiconductor lasers; laser diodes
  • 42.60.Da
    Laser resonators, cavities, amplifiers, arrays, and rings
  • 79.20.Fv
    Electron-surface impact: Auger emission
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • YEAR: 2003

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (9)

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  1. K. Hess, Advanced Theory of Semiconductor Devices (IEEE, Piscataway, NJ, 2000), and references therein.
  2. C. H. Henry, R. A. Logan, and F. R. Merritt, Appl. Phys. Lett. 31, 454 (1977).
  3. M. Fukuda, J. Appl. Phys. 59, 4172 (1986).
  4. K. D. Choquette, W. W. Chow, K. M. Geib, and R. P. Schneider, Jr., Appl. Phys. Lett. 68, 3689 (1996).
  5. K. D. Choquette, W. W. Chow, G. R. Hadley, H. Q. Hou, and K. M. Geib, Appl. Phys. Lett. 70, 823 (1997).
  6. S. M. Sze, Semiconductor Devices: Physics and Technology, 2nd ed. (Wiley, New York, 2002).
  7. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995), and references therein.
  8. M. Grupen and K. Hess, IEEE J. Quantum Electron. 34, 120 (1998).
  9. F. Oyafuso, P. von Allmen, M. Grupen, and K. Hess, VLSI Design 8, 463 (1998).

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