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4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

Appl. Phys. Lett. 83, 4701 (2003); doi:10.1063/1.1633019

Issue Date: 8 December 2003

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A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung, and M. Razeghi
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208
We demonstrate 4.5 mW output power from AlGaN-based single quantum well ultraviolet light-emitting diodes at a very short wavelength of 267 nm in pulsed operation mode. The output power in continuous-wave mode reaches a value of 165 µW at an injected current of 435 mA. The measurements were done on arrays of four devices flip chip bonded to AlN submounts for thermal management. ©2003 American Institute of Physics.
History: Received 4 September 2003; accepted 20 October 2003
Permalink: http://link.aip.org/link/?APPLAB/83/4701/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Jb
    Light-emitting devices
  • 78.67.De
    Optical properties of quantum wells
  • 85.35.Be
    Quantum well devices including quantum dots, quantum wires, etc
  • 42.72.Bj
    Visible and ultraviolet sources
  • YEAR: 2003

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (10)
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  1. A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 81, 801 (2002).
  2. J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang, and M. Asif Khan, Appl. Phys. Lett. 81, 4910 (2002).
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  8. R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi (unpublished).
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