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Low-temperature, in situ tunable, uniaxial stress measurements in semiconductors using a piezoelectric actuator

Appl. Phys. Lett. 83, 5235 (2003); doi:10.1063/1.1635963

Issue Date: 22 December 2003

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M. Shayegan and K. Karrai
Center for Nanoscience, Sektion Physik der Ludwig-Maximilians-Universitaet, Geschwister-Scholl-Platz 1, 80539 Muenchen, Germany

Y. P. Shkolnikov, K. Vakili, and E. P. De Poortere
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544

S. Manus
Center for Nanoscience, Sektion Physik der Ludwig-Maximilians-Universitaet, Geschwister-Scholl-Platz 1, 80539 Muenchen, Germany
We demonstrate the use of a piezoelectric actuator to apply, at low temperatures, uniaxial stress in the plane of a two-dimensional electron system confined to a modulation-doped AlAs quantum well. Via the application of stress, which can be tuned in situ and continuously, we control the energies and occupations of the conduction-band minima and the electronic properties of the electron system. We also report measurements of the longitudinal and transverse strain versus bias for the actuator at 300, 77, and 4.2 K. A pronounced hysteresis is observed at 300 and 77 K, while at 4.2 K, strain is nearly linear and shows very little hysteresis with the applied bias. ©2003 American Institute of Physics.
History: Received 28 April 2003; accepted 30 October 2003
Permalink: http://link.aip.org/link/?APPLAB/83/5235/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.60.Bs
    Mechanical and acoustical properties of thin films
  • 68.65.Fg
    Quantum wells (structure and nonelectronic properties)
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 85.50.-n
    Dielectric, ferroelectric, and piezoelectric devices
  • 81.07.St
    Quantum wells: fabrication and characterization
  • YEAR: 2003

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (16)
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  1. For stress-induced valley splitting in Si-metal–oxide–semiconductor field effect transistor 2D electrons, see G. Dorda, J. Appl. Phys. 42, 2053 (1971);
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  2. For previous reports of displacement/bias for piezoelectric tubes in the 4 to 300 K temperature range, see K. G. Vandervoort, R. K. Zasadzinski, G. G. Galicia, and G. W. Crabtree, Rev. Sci. Instrum.64, 896 (1993);
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  3. Part No. PSt 150/5×5×7, from Piezomechanik, Munich, Germany.
  4. We used two types of strain gauges: (1) "Advance" (Ni 45%, Cu 55%), part No. SG-2/350-LY11, from Omega Engineering, and (2) "Karma" (Ni 74%, Cr 20%, Al 3%, Fe 3%), part No. WK-06-062TT-350, from Vishay Micromeasurements Group. For each type, the resistance change of the gauge DeltaR/R, divided by its sensitivity factor, gives the strain defined as DeltaL/L, where L is the length along the direction of the gauge axis. The Karma gauges have the advantage that corrections to their sensitivity factor, due to changes in temperature and transverse strain, are smaller and better known. Such corrections can be up to 20% (for the Advance gauges at low temperatures), and have been included in the strain data reported here.
  5. Part No. 45640 "plus endfest 300", from UHU, Buehl, Germany. We cured the epoxy at 80 °C for 60 min.
  6. We also have data at 0.30 K and 0.03 K; these are similar to the 4.2 K data to within our experimental resolution.
  7. See, e.g., R. C. Barrett and C. F. Quate, Rev. Sci. Instrum. 62, 1393 (1991).
  8. A similarly large ratio (~3) was also reported at 50 K for (Ba,Sr)TiO3 ceramics by
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  9. The use of piezo materials for applying a small ac stress to a semiconductor crystal to modulate its optical properties was reported in
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  10. Data of Figs. 1 and 2 were taken on two different piezo rods with slightly different strain versus bias characteristics.
  11. Using the results of P. Lefebvre, B. Gil, H. Mathieu, and R. Planel, Phys. Rev. B 40, 7802 (1989),
    12. we estimate that, at a piezo bias of 300 V in Fig. 2, the components of the tensile stress applied to the GaAs crystal are sigmax=210 bar and sigmay=23 bar in our experiments.
  12. E. P. De Poortere, Y. P. Shkolnikov, E. Tutuc, S. J. Papadakis, and M. Shayegan, Appl. Phys. Lett. 80, 1583 (2002).
  13. K. Maezawa, T. Mizutani, and S. Yamada, J. Appl. Phys. 71, 296 (1992).
  14. Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, M. Shayegan, and K. Karrai (unpublished).
    15. Because of finite residual stress during sample cooldown, we needed a piezo bias of about 34 V [vertical arrow in Fig. 4(a)] to attain the zero-stress condition in our experiment.
  15. AlAs 2D electrons exhibit a nearly linear enhancement of valley splitting with B
    16. [Y. P. Shkolnikov, E. P. De Poortere, E. Tutuc, and M. Shayegan, Phys. Rev. Lett. 89, 226805 (2002)].
    This enhancement is ignored in the schematic energy level diagram shown in Fig. 4(b).
  16. F. F. Fang and P. J. Stiles, Phys. Rev. 174, 823 (1968).

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