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Effect of nitrogen on the optical and transport properties of Ga0.48In0.52NyP1–y grown on GaAs(001) substrates

Appl. Phys. Lett. 83, 5446 (2003); doi:10.1063/1.1637148

Issue Date: 29 December 2003

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Y. G. Hong, A. Nishikawa, and C. W. Tu
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
We report gas-source molecular-beam epitaxy of Ga1–xInxNyP1–y grown on GaAs(100) substrates. Nitrogen incorporation dramatically reduces the Ga1–xInxP band gap. With nitrogen incorporation, the photoluminescence (PL) peak energy exhibits an inverted S-shaped dependence with temperature, and the low-temperature PL spectra exhibit an asymmetric line shape with a low-energy tail. Both indicate the presence of N-related localized states, which dominate the radiative recombination processes at low temperature. N incorporation significantly reduces the free-electron concentration and mobility. The free-electron concentration of N-containing Ga0.48In0.52N0.005P0.995 decreases dramatically with high-temperature annealing (800 °C), from 4.4×1018 to 8.0×1016 cm–3. This is believed to be due to passivation of Si by N through the formation of Si–N pairs. ©2003 American Institute of Physics.
History: Received 6 August 2003; accepted 5 November 2003
Permalink: http://link.aip.org/link/?APPLAB/83/5446/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.61.Ey
    Electrical properties of III–V semiconductors (thin films)
  • 78.66.Fd
    Optical properties of III–V semiconductors (thin films)
  • 73.20.Hb
    Surface impurity and defect levels; energy states of adsorbed species
  • 78.55.Cr
    Photoluminescence in III–V semiconductors
  • 68.55.Ln
    Thin film defects and impurities including doping, implantation, distribution, concentration, etc
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 73.50.Dn
    Low-field transport and mobility; piezoresistance (thin films)
  • 73.50.Gr
    Charge carriers: generation, recombination, lifetime, trapping, mean free paths (thin films)
  • 73.20.Fz
    Weak or Anderson localization (surface/interface states)
  • YEAR: 2003

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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