Integrated pulsed photoconductivity of organic light-emitting diodes
Appl. Phys. Lett. 83, 5473 (2003); doi:10.1063/1.1629785
Issue Date: 29 December 2003
You are not logged in to this journal. Log in
We analyze the transient photoconductivity induced by short light pulses in organic light-emitting diodes (OLEDs) to characterize the charge transport dynamics with high time resolution over four time decades. We show how integrated pulsed photoconductivity (IPP) can be used as a diagnostic method for finished, packaged OLEDs to determine and characterize the presence of impurities or other effects that influence the efficiency of charge transport. We demonstrate the usefulness of the method by comparing a simple one-layer Alq3 device on indium tin oxide (ITO) to a device where a nanometer thin NPB film separates the Alq3 from the ITO. In the single-layer device a charge transport dynamics stretching over several decades is observed, probably due to Alq3 contamination by its direct contact with ITO. ©2003 American Institute of Physics.
| History: | Received 4 August 2003; accepted 29 September 2003 |
| Permalink: |
http://link.aip.org/link/?APPLAB/83/5473/1 |
KEYWORDS and PACS
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
REFERENCES (23)
For access to fully linked references, you need to log in.
For access to fully linked references, you need to Log in.
- C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).
- H. Antoniadis and E. A. Schiff, Phys. Rev. B 46, 9482 (1992).
- R. G. Kepler, P. M. Beeson, S. J. Jacobs, R. A. Anderson, M. B. Sinclair, V. S. Valencia, and P. A. Cahill, Appl. Phys. Lett. 66, 3618 (1995).
- A. J. Campbell, D. D. C. Bradley, and H. Antoniadis, Appl. Phys. Lett. 79, 2133 (2001).
- G. G. Malliaras, Y. Shen, D. H. Dunlap, H. Murata, and Z. H. Kafafi, Appl. Phys. Lett. 79, 2582 (2002).
- H. Fong, K. Lun, and S. So,
Jpn. J. Appl. Phys., Part 2 41, L1122 (2002) . - L.-B. Lin, R. H. Young, M. G. Mason, S. A. Jenekhe, and P. M. Borsenberger, Appl. Phys. Lett. 72, 864 (1998).
- B. Chen, C. Lee, S. Lee, P. Webb, Y. Chan, W. Gambling, H. Tian, and W. Zhu,
Jpn. J. Appl. Phys., Part 1 39, 1190 (2000) . - S. Barth, P. Müller, H. Riel, P. F. Seidler, W. Riess, H. Vestweber, and H. Bässler, J. Appl. Phys. 89, 3711 (2001).
- A. D. Walser, I. Sokolik, R. Priestley, and R. Dorsinville,
Synth. Met. 84, 877 (1997) . - D. Moses, J. Wang, A. Dogariu, D. Fichou, and C. Videlot, Phys. Rev. B 59, 7715 (1999).
- J. P. Partanen, P. Nouchi, J. M. C. Jonathan, and R. W. Hellwarth, Phys. Rev. B 44, 1487 (1991).
- P. Nouchi, J. P. Partanen, and R. W. Hellwarth, Phys. Rev. B 47, 15581 (1993).
- E. Helfand, J. Chem. Phys. 78, 1931 (1983).
- H. Scher and E. W. Montroll, Phys. Rev. B 12, 2455 (1975).
- T. Tiedje and A. Rose,
Solid State Commun. 37, 49 (1981) . - Y. Hirose, A. Kahn, V. Aristov, and P. Soukiassian, Appl. Phys. Lett. 68, 217 (1996).
- Y. Qiu, Y. Gao, L. Wang, and D. Zhang,
Synth. Met. 130, 235 (2002) . - K. W. Wong, H. L. Yip, Y. Luo, K. Y. Wong, W. M. Lau, K. H. Low, H. F. Chow, Z. Q. Gao, W. L. Yeung, and C. C. Chang, Appl. Phys. Lett. 80, 2788 (2002).
- Q. Le, F. Nuesch, L. J. Rothberg, E. W. Forsythe, and Y. Gao, Appl. Phys. Lett. 75, 1357 (1999).
- S. T. Lee, Z. Q. Gao, and L. S. Hung, Appl. Phys. Lett. 75, 1404 (1999).
- M. P. de Jong, D. P. L. Simons, M. A. Reijme, L. J. van IJzendoorn, A. W. D. van der Gon, M. J. A. de Voigt, H. H. Brongersma, and R. W. Gymer,
Synth. Met. 110, 1 (2000) . - A. R. Schlatmann, D. W. Floet, A. Hilberer, F. Garten, P. J. M. Smulders, T. M. Klapwijk, and G. Hadziioannou, Appl. Phys. Lett. 69, 1764 (1996).







