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Valley splitting in strained silicon quantum wells

Appl. Phys. Lett. 84, 115 (2004); doi:10.1063/1.1637718

Issue Date: 5 January 2004

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Timothy B. Boykin
Department of Electrical and Computer Engineering, University of Alabama in Huntsville, Huntsville, Alabama 35899

Gerhard Klimeck
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109

M. A. Eriksson, Mark Friesen, and S. N. Coppersmith
Department of Physics, University of Wisconsin, Madison, Wisconsin 53706

Paul von Allmen, Fabiano Oyafuso, and Seungwon Lee
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for quantum computing architectures. The valley splitting is computed for realistic devices using the quantitative nanoelectronic modeling tool NEMO. A simple, analytically solvable tight-binding model reproduces the behavior of the splitting in the NEMO results and yields much physical insight. The splitting is in general nonzero even in the absence of electric field in contrast to previous works. The splitting in a square well oscillates as a function of S, the number of layers in the quantum well, with a period that is determined by the location of the valley minimum in the Brillouin zone. The envelope of the splitting decays as S–3. The feasibility of observing such oscillations experimentally in Si/SiGe heterostructures is discussed. ©2004 American Institute of Physics.
History: Received 15 August 2003; accepted 10 November 2003
Permalink: http://link.aip.org/link/?APPLAB/84/115/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.21.Fg
    Quantum wells (electron states/collective excitations)
  • 73.20.At
    Surface states, band structure, electron density of states
  • 73.20.Fz
    Weak or Anderson localization (surface/interface states)
  • 71.15.Ap
    Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.) (condensed matter electronic structure)
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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