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Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

Appl. Phys. Lett. 84, 151 (2004); doi:10.1063/1.1637950

Issue Date: 5 January 2004

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M. Feng, N. Holonyak, Jr., and W. Hafez
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801
This letter reports the direct observation of the radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBTs). For a 1 µm×16 µm emitter HBT, we demonstrate the change of the spontaneous light emission intensity (DeltaIout) as the base current (Deltaib) of the HBT is varied from 0 to 5 mA, i.e., an HBT operating as a light-emitting transistor. We also demonstrate output light modulation from the base layer at 1 MHz with the base current modulated at 1 MHz in normal transistor mode operation of the HBT. ©2004 American Institute of Physics.
History: Received 29 August 2003; accepted 27 October 2003
Permalink: http://link.aip.org/link/?APPLAB/84/151/1
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0003-6951 (print)   1077-3118 (online)
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