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Effects of pressure on the band structure of highly mismatched Zn1–yMnyOxTe1–x alloys

Appl. Phys. Lett. 84, 924 (2004); doi:10.1063/1.1646457

Issue Date: 9 February 2004

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W. Shan, K. M. Yu, W. Walukiewicz, J. W. Beeman, J. Wu, J. W. Ager III, M. A. Scarpulla, O. D. Dubon, and E. E. Haller
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
We report photomodulation spectroscopy measurements of the pressure dependence of the optical transition in Zn1–yMnyOxTe1–x alloys that is associated with the lowest Gamma conduction band (termed E– subband). The pressure-induced energy shift of the E– transition is nonlinear and much weaker as compared to the change of the direct band gap of Zn0.88Mn0.12Te. The weak pressure dependence of the E– transition can be fully understood based on the band anticrossing model in which the E– subband results from an interaction between the extended ZnMnTe conduction-band states and the localized O electronic states. ©2004 American Institute of Physics.
History: Received 4 September 2003; accepted 15 December 2003
Permalink: http://link.aip.org/link/?APPLAB/84/924/1
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KEYWORDS and PACS

Keywords
PACS
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • 71.23.An
    Theories and models of electronic structure of disordered solids; localized states
  • 62.50.+p
    High-pressure and shock wave effects in solids and liquids
  • 78.20.-e
    Optical properties of bulk materials and thin films
  • 78.20.Ci
    Optical constants including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
  • YEAR: 2004

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (24)
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