Picosecond dynamics of spin-related optical nonlinearities in InxGa1–xAs multiple quantum wells at 1064 nm
Light-induced absorption and diffraction measurements of resonantly excited 10-nm-width InGaAs multiple quantum wells have been carried out, using circularly polarized beams at 1064 nm. Spin relaxatio...
Light-induced absorption and diffraction measurements of resonantly excited 10-nm-width InGaAs multiple quantum wells have been carried out, using circularly polarized beams at 1064 nm. Spin relaxatio...
Polysulfone as an electro-optic polymer host material
The practicality of using polysulfone as a host material for electro-optic polymer devices is demonstrated. For loadings of 15–25 weight %, r33 values of 53–55 pm/V were obtained at = 1.06 &...
The practicality of using polysulfone as a host material for electro-optic polymer devices is demonstrated. For loadings of 15–25 weight %, r33 values of 53–55 pm/V were obtained at = 1.06 &...
High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
Appl. Phys. Lett. 84, 1046 (2004); doi:10.1063/1.1647273
Issue Date: 16 February 2004
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We demonstrate high-power AlGaN-based ultraviolet light-emitting diodes grown on sapphire with an emission wavelength of 280 nm using an asymmetric single-quantum-well active layer configuration on top of a high-quality AlGaN/AlN template layer. An output power of 1.8 mW at a pulsed current of 400 mA was achieved for a single 300 µm×300 µm diode. This device reached a high peak external quantum efficiency of 0.24% at 40 mA. An array of four diodes produced 6.5 mW at 880 mA of pulsed current. ©2004 American Institute of Physics.
| History: | Received 21 November 2003; accepted 18 December 2003 |
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