Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Enhancement of visible second-harmonic generation in epitaxial GaN-based two-dimensional photonic crystal structures
Second-harmonic (SH) radiation generated in reflection is measured from the surface of a two-dimensional triangular photonic crystal in a GaN layer. A very large SH enhancement is observed when the in...
Next Article
Influence of mounting on continuous-wave photoluminescence from midinfrared PbSrSe/PbSe multiple quantum wells
Strong continuous-wave photoluminescence from midinfrared lead–salt PbSrSe/PbSe multiple quantum wells grown on (111) BaF2 substrates by molecular-beam epitaxy was observed at temperatures from 1...

High quantum efficiency AlGaN solar-blind p-i-n photodiodes

Appl. Phys. Lett. 84, 1248 (2004); doi:10.1063/1.1650550

Issue Date: 23 February 2004

You are not logged in to this journal. Log in

R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208
We report AlGaN-based back-illuminated solar-blind ultraviolet p-i-n photodetectors with a peak responsivity of 136 mA/W at 282 nm without bias. This corresponds to a high external quantum efficiency of 60%, which improves to a value as high as 72% under 5 V reverse bias. We attribute the high performance of these devices to the use of a very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material and a highly conductive Si–In co-doped Al0.5Ga0.5N layer. ©2004 American Institute of Physics.
History: Received 15 July 2003; accepted 30 December 2003
Permalink: http://link.aip.org/link/?APPLAB/84/1248/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (267 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • 85.60.Gz
    Photodetectors including infrared and CCD detectors
  • YEAR: 2004

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (11)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. P. Kung, A. Yasan, R. McClintock, S. R. Darvish, K. Mi, and M. Razeghi, Proc. SPIE 4650, 199 (2002).
  2. M. Razeghi, Proc. IEEE 90, 1006 (2002).
  3. H. Wang, J. Zhang, C. Chen, Q. Fareed, J. Yang, and A. Khan, Appl. Phys. Lett. 81, 604 (2002).
  4. A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 83, 4701 (2003).
  5. J. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. Yang, and A. Khan, Appl. Phys. Lett. 81, 4910 (2002).
  6. S. Yamaguchi, M. Kariya, S. Nitta, H. Amano, and I. Akasaki, Appl. Surf. Sci. 159–160, 414 (2000).
  7. P. Cantu, S. Keller, U. Mishra, and S. DenBaars, Appl. Phys. Lett. 82, 3683 (2003).
  8. V. Adivarahan, G. Simin, G. Tamulaitis, R. Srinivasan, J. Yang, A. Khan, M. Shur, and R. Gaska, Appl. Phys. Lett. 79, 1903 (2001).
  9. C. Collins, T. Li, A. Beck, R. Dupuis, J. Campbell, J. Carrano, M. Schurman, and I. Ferguson, Appl. Phys. Lett. 75, 2138 (1999).
  10. P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, J. Cryst. Growth 231, 366 (2001).
  11. C. Collins, U. Chowdhury, M. Wong, B. Yang, A. Beck, R. Dupuis, and J. Campbell, Appl. Phys. Lett. 80, 3754 (2002).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics