Observation of spontaneous ordering in the optoelectronic material GaInNP
Appl. Phys. Lett. 84, 1299 (2004); doi:10.1063/1.1650045
Issue Date: 23 February 2004
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We report a detailed structural and optical characterization of high-quality GaInNP films. These films were grown by gas-source molecular-beam epitaxy on GaAs (100) substrates. These epitaxial layers were then characterized by a high-resolution x-ray rocking curve (HRXRC) and photoluminescence (PL) measurements. With nitrogen incorporation, the PL peak redshifts, indicating bandgap reduction and the line-width broadening increases due to alloy scattering. The anisotropic properties of the polarized HRXRC and polarized piezoreflectance spectra are used to prove the spontaneous ordering in GaInP incorporating nitrogen. Furthermore, ordering-induced superlattice-like microstructure shown in high-resolution transmission electron microscope images is used to confirm the spontaneous ordering in Ga0.44In0.56NxP1x epitaxial layers. ©2004 American Institute of Physics.
| History: | Received 30 October 2003; accepted 19 December 2003 |
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http://link.aip.org/link/?APPLAB/84/1299/1 |
KEYWORDS and PACS
gallium compounds,
indium compounds,
III-V semiconductors,
wide band gap semiconductors,
semiconductor thin films,
semiconductor growth,
molecular beam epitaxial growth,
red shift,
spectral line broadening,
piezoreflectance,
photoluminescence,
transmission electron microscopy,
semiconductor epitaxial layers
- 68.55.Jk
Thin film structure and morphology; thickness; crystalline orientation and texture - 78.55.Cr
Photoluminescence in IIIV semiconductors - 78.66.Fd
Optical properties of IIIV semiconductors (thin films) - 81.05.Ea
IIIV semiconductors: fabrication, treatment, testing and analysis - 78.20.Hp
Piezo-, elasto-, and acoustooptical effects (bulk materials/thin films) including photoacoustic effects - 81.15.Hi
Molecular, atomic, ion, and chemical beam epitaxy - YEAR: 2004
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
REFERENCES (10)
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