High-performance carbon nanotube transistors on SrTiO3/Si substrates
Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high- dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have be...
Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high- dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have be...
Quantum-well-base heterojunction bipolar light-emitting transistor
This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in the base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operati...
This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in the base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operati...
Multilevel memory based on molecular devices
Appl. Phys. Lett. 84, 1949 (2004); doi:10.1063/1.1667615
Issue Date: 15 March 2004
You are not logged in to this journal. Log in
Multilevel molecular memory devices were proposed and demonstrated for nonvolatile data storage up to three bits (eight levels) per cell, in contrast to the standard one-bit-per-cell (two levels) technology. In the demonstration, charges were precisely placed at up to eight discrete levels in redox active molecules self-assembled on single-crystal semiconducting nanowire field-effect transistors. Gate voltage pulses and current sensing were used for writing and reading operations, respectively. Charge storage stability was tested up to retention of 600 h, as compared to the longest retention of a few hours previously reported for one-bit-per-cell molecular memories. ©2004 American Institute of Physics.
| History: | Received 8 October 2003; accepted 14 January 2004 |
| Permalink: |
http://link.aip.org/link/?APPLAB/84/1949/1 |
| BUY THIS ARTICLE | (US$24) |
|
|
|
|
Connotea
CiteULike
del.icio.us
BibSonomy
KEYWORDS and PACS
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (12)
For access to fully linked references, you need to log in.
For access to fully linked references, you need to Log in.
- M. A. Reed, J. Chen, A. M. Rawlett, D. W. Price, and J. M. Tour, Appl. Phys. Lett. 78, 3735 (2001).
- C. P. Collier, G. Mattersteig, E. W. Wong, Y. Luo, K. Beverly, J. Sampaio, F. M. Raymo, J. F. Stoddart, and J. R. Heath,
Science 289, 1172 (2000) . - X. Duan, Y. Huang, and C. M. Lieber,
Nano Lett. 2, 487 (2002) . - C. Li, D. Zhang, X. Liu, S. Han, T. Tang, C. Zhou, W. Fan, J. Koehne, J. Han, M. Meyyappan, A. R. Rawlett, D. W. Price, and J. M. Tour, Appl. Phys. Lett. 82, 645 (2003).
- B. Ricco, G. Torelli, M. Lanzoni, A. Manstretta, H. E. Maes, D. Montanari, and A. Modelli,
Proc. IEEE 86, 2399 (1998) . - Q. Li, G. Mathur, M. Homsi, S. Surthi, V. Misra, V. Malinavskii, K. Schweikart, L. Yu, J. S. Lindsey, Z. Liu, R. Dabke, A. Yasseri, D. Bocian, and W. Kuhr, Appl. Phys. Lett. 81, 1494 (2002).
- K. M. Roth, N. Dontha, R. Dabke, D. Gryko, C. Clausen, J. Lindsey, D. Bocian, and W. Kuhr,
J. Vac. Sci. Technol. B 18, 2359 (2000) . - Y. Cui and C. M. Lieber,
Science 291, 851 (2001) . - C. Li, D. Zhang, S. Han, X. Liu, T. Tang, J. Han, and C. Zhou,
Adv. Mater. (Weinheim, Ger.) 15, 143 (2003) ;
D. Zhang, C. Li, S. Han, X. Liu, T. Tang, W. Jin, and C. Zhou, Appl. Phys. Lett. 82, 112 (2003). - C. Yan, M. Zharnikov, A. Golzhauser, and M. Grunze,
Langmuir 16, 6208 (2000) . - S. Noguchi and H. Sakata,
J. Phys. D 13, 1129 (1980) . - R. Compano, L. Molenkamp, and D. J. Paul, Technology Roadmap for Nanoelectronics, www.nanoworld.org/NanoLibrary/nanoroad.pdf
