Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes
Appl. Phys. Lett. 84, 2037 (2004); doi:10.1063/1.1686894
Issue Date: 22 March 2004
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We report on the surface passivation of Type-II InAs/GaSb superlattice photodetectors using various ammonium sulfide solutions. Compared to unpassivated detectors, zero-bias resistance of treated 400 µm×400 µm devices with 8 µm cutoff wavelength was improved by over an order of magnitude to ~20 k
at 80 K. Reverse-bias dark current density was reduced by approximately two orders of magnitude to less than 10 mA/cm2 at 2 V. Dark current modeling, which takes into account trap-assisted tunneling, indicates greater than 70 times reduction in bulk trap density for passivated detectors. ©2004 American Institute of Physics.
at 80 K. Reverse-bias dark current density was reduced by approximately two orders of magnitude to less than 10 mA/cm2 at 2 V. Dark current modeling, which takes into account trap-assisted tunneling, indicates greater than 70 times reduction in bulk trap density for passivated detectors. ©2004 American Institute of Physics.
| History: | Received 27 October 2003; accepted 22 January 2004 |
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0003-6951 (print)
1077-3118 (online)
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