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Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

Appl. Phys. Lett. 84, 2037 (2004); doi:10.1063/1.1686894

Issue Date: 22 March 2004

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A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, and M. Razeghi
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208

M. Tidrow
Missile Defense Agency, 7100 Defense Pentagon, Washington, DC 20301
We report on the surface passivation of Type-II InAs/GaSb superlattice photodetectors using various ammonium sulfide solutions. Compared to unpassivated detectors, zero-bias resistance of treated 400 µm×400 µm devices with 8 µm cutoff wavelength was improved by over an order of magnitude to ~20  kOmega at 80 K. Reverse-bias dark current density was reduced by approximately two orders of magnitude to less than 10  mA/cm2 at –2 V. Dark current modeling, which takes into account trap-assisted tunneling, indicates greater than 70 times reduction in bulk trap density for passivated detectors. ©2004 American Institute of Physics.
History: Received 27 October 2003; accepted 22 January 2004
Permalink: http://link.aip.org/link/?APPLAB/84/2037/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • 85.60.Gz
    Photodetectors including infrared and CCD detectors
  • 81.65.Rv
    Surface passivation
  • 72.40.+w
    Photoconduction and photovoltaic effects
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (11)

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  1. G. Sai-Halasz, R. Tsu, and L. Esaki, Appl. Phys. Lett. 30, 651 (1971).
  2. Y. Wei, A. Gin, M. Razeghi, and G. J. Brown, Appl. Phys. Lett. 80, 3262 (2002).
  3. Y. Wei, A. Gin, M. Razeghi, and G. J. Brown, Appl. Phys. Lett. 81, 3675 (2002).
  4. L. Bürkle and F. Fuchs, in Handbook of Infrared Detection Technologies, edited by M. Henini and M. Razeghi (Elsevier, Oxford, 2002).
  5. A. Gin, Y. Wei, J. Bae, A. Hood, J. Nah, and M. Razeghi, Thin Solid Films 447–448C, 489 (2004).
  6. C. Sandroff, R. Nottenburg, J. Bischoff, and R. Bhat, Appl. Phys. Lett. 51, 33 (1987).
  7. C. Lin, Y. Su, T. Se, and W. Li, Jpn. J. Appl. Phys., Part 1 37, 1543 (1998).
  8. E. Papis, A. Kud[barred lower-case ell]a, T. Piotrowski, K. Go[barred lower-case ell]aszewska, E. Kami[n-acute]ska, and A. Piotrowska, Mater. Sci. Semicond. Process. 4, 293 (2001).
  9. M. Razeghi, Y. Wei, A. Gin, G. J. Brown, and D. K. Johnstone, Proc. SPIE 4650, 111 (2002).
  10. V. N. Bessolov, E. V. Konenkova, and M. V. Lebedev, Mater. Sci. Eng., B 44, 376 (1997).
  11. Q. K. Yang, F. Fuchs, J. Schmitz, and W. Pletschen, Appl. Phys. Lett. 81, 4757 (2002).

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